|
This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
Electric-field sensor based on a double quantum dot in a microcavity
A. V. Tsukanovab, V. G. Chekmachevab a Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region
b Insitute of Physics and Technology, Institution of Russian Academy of Sciences, Moscow
Abstract:
A scheme for an optical quantum external-electric-field sensor based on a double quantum dot placed in a high-$Q$ semiconductor microcavity is proposed. A model of the dynamic processes occurring in this system is developed, its spectral characteristics are investigated, and the noise stability of the sensor is examined. It is demonstrated that, owing to design features, the device has a number of advantages, including high sensitivity, the presence of different excitation and measurement channels, and the possibility of accurate determination of the spatial field distribution.
Received: 01.02.2017 Accepted: 22.02.2017
Citation:
A. V. Tsukanov, V. G. Chekmachev, “Electric-field sensor based on a double quantum dot in a microcavity”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1249–1256; Semiconductors, 51:9 (2017), 1200–1207
Linking options:
https://www.mathnet.ru/eng/phts6046 https://www.mathnet.ru/eng/phts/v51/i9/p1249
|
Statistics & downloads: |
Abstract page: | 48 | Full-text PDF : | 37 |
|