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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 9, Pages 1155–1159
DOI: https://doi.org/10.21883/FTP.2017.09.44876.8527 (Mi phts6032) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Non-electronic properties of semiconductors (atomic structure, diffusion)

Residual stresses in silicon and their evolution upon heat treatment and irradiation

I. E. Matyasha, I. A. Minailovaa, B. K. Serdegaa, L. I. Khirunenkob

a Institute of Semiconductor Physics NAS, Kiev
b Institute of Physics, National Academy of Sciences of Ukraine, Kiev
Full-text PDF (170 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2017.09.44876.8527
Abstract: The distributions of internal stresses in undoped and tin-doped silicon and the influence of electron irradiation with an energy of 5 MeV and of heat treatment at 450$^\circ$C on the stresses are studied. The stresses are measured by a method based on the detection of birefringence by modulation polarimetry. It is shown that tin-doped silicon includes stripes of point defects with a nonuniform distribution of residual stresses of up to 20 kg cm$^{-2}$. Heat treatment at 450$^\circ$C induces an increase in the residual stresses in the sample to 50 kg cm$^{-2}$. It is established that the radiation defects formed upon the irradiation of tin-doped silicon reduce the residual stresses to 2–3 kg cm$^{-2}$.
Received: 20.01.2017
Accepted: 06.02.2017
English version:
Semiconductors, 2017, Volume 51, Issue 9, Pages 1107–1110
DOI: https://doi.org/10.1134/S1063782617090147
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. E. Matyash, I. A. Minailova, B. K. Serdega, L. I. Khirunenko, “Residual stresses in silicon and their evolution upon heat treatment and irradiation”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1155–1159; Semiconductors, 51:9 (2017), 1107–1110
Citation in format AMSBIB
\Bibitem{MatMinSer17}
\by I.~E.~Matyash, I.~A.~Minailova, B.~K.~Serdega, L.~I.~Khirunenko
\paper Residual stresses in silicon and their evolution upon heat treatment and irradiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 9
\pages 1155--1159
\mathnet{http://mi.mathnet.ru/phts6032}
\crossref{https://doi.org/10.21883/FTP.2017.09.44876.8527}
\elib{https://elibrary.ru/item.asp?id=29973049}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 9
\pages 1107--1110
\crossref{https://doi.org/10.1134/S1063782617090147}
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  • https://www.mathnet.ru/eng/phts/v51/i9/p1155
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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