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This article is cited in 1 scientific paper (total in 1 paper)
Non-electronic properties of semiconductors (atomic structure, diffusion)
Residual stresses in silicon and their evolution upon heat treatment and irradiation
I. E. Matyasha, I. A. Minailovaa, B. K. Serdegaa, L. I. Khirunenkob a Institute of Semiconductor Physics NAS, Kiev
b Institute of Physics, National Academy of Sciences of Ukraine, Kiev
Abstract:
The distributions of internal stresses in undoped and tin-doped silicon and the influence of electron irradiation with an energy of 5 MeV and of heat treatment at 450$^\circ$C on the stresses are studied. The stresses are measured by a method based on the detection of birefringence by modulation polarimetry. It is shown that tin-doped silicon includes stripes of point defects with a nonuniform distribution of residual stresses of up to 20 kg cm$^{-2}$. Heat treatment at 450$^\circ$C induces an increase in the residual stresses in the sample to 50 kg cm$^{-2}$. It is established that the radiation defects formed upon the irradiation of tin-doped silicon reduce the residual stresses to 2–3 kg cm$^{-2}$.
Received: 20.01.2017 Accepted: 06.02.2017
Citation:
I. E. Matyash, I. A. Minailova, B. K. Serdega, L. I. Khirunenko, “Residual stresses in silicon and their evolution upon heat treatment and irradiation”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1155–1159; Semiconductors, 51:9 (2017), 1107–1110
Linking options:
https://www.mathnet.ru/eng/phts6032 https://www.mathnet.ru/eng/phts/v51/i9/p1155
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