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This article is cited in 8 scientific papers (total in 8 papers)
Manufacturing, processing, testing of materials and structures
Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures
D. L. Alfimovaa, L. S. Luninab, M. L. Luninaa, D. A. Arustamyanb, A. E. Kazakovab, S. N. Chebotarevab a Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
b Platov South-Russian State Polytechnic University (NPI), Novocherkassk, Rostov-on-Don oblast, Russia
Abstract:
The results obtained in the growth of isoparametric InAlGaPAs/GaAs heterostructures are discussed. The composition, structural quality, and luminescence properties of the heterostructures are studied.
Received: 28.12.2016 Accepted: 28.02.2017
Citation:
D. L. Alfimova, L. S. Lunin, M. L. Lunina, D. A. Arustamyan, A. E. Kazakova, S. N. Chebotarev, “Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1426–1433; Semiconductors, 51:10 (2017), 1377–1384
Linking options:
https://www.mathnet.ru/eng/phts6030 https://www.mathnet.ru/eng/phts/v51/i10/p1426
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