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This article is cited in 3 scientific papers (total in 3 papers)
Reviews
Tight-binding simulation of silicon and germanium nanocrystals
A. V. Gert, M. O. Nestoklon, A. A. Prokof'ev, I. N. Yassievich Ioffe Institute, St. Petersburg
Abstract:
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended $s$, $p$, $d$, and $s^*$ basis is explained in details and the results obtained with the use of this method are presented.
Received: 10.04.2017 Accepted: 17.04.2017
Citation:
A. V. Gert, M. O. Nestoklon, A. A. Prokof'ev, I. N. Yassievich, “Tight-binding simulation of silicon and germanium nanocrystals”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1325–1340; Semiconductors, 51:10 (2017), 1274–1289
Linking options:
https://www.mathnet.ru/eng/phts6014 https://www.mathnet.ru/eng/phts/v51/i10/p1325
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Abstract page: | 91 | Full-text PDF : | 34 |
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