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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1569–1573
DOI: https://doi.org/10.21883/FTP.2017.11.45113.28 (Mi phts6010) 		 
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Effect of the surface on transport phenomena in PbSnTe : In/BaF$_{2}$ films

A. N. Akimova, A. E. Klimovba, S. P. Supruna, V. S. Epova

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
Full-text PDF (246 kB)
DOI: https://doi.org/10.21883/FTP.2017.11.45113.28
Abstract: The effect of the surface on the I–V characteristics of PbSnTe:In film-based structures is investigated in zero magnetic field and in a magnetic field of $B\le$ 4 T with different orientations, including in the mode of current limited by space charge. Analysis of the features in the experimental data obtained at different magnetic-field directions and upon layer-by-layer etching of the films shows that the contributions of the free film surface and interface with the substrate to transport phenomena are significantly different and can be caused by a difference in the parameters of localization centers near these surfaces.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1517–1521
DOI: https://doi.org/10.1134/S1063782617110021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. N. Akimov, A. E. Klimov, S. P. Suprun, V. S. Epov, “Effect of the surface on transport phenomena in PbSnTe : In/BaF$_{2}$ films”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1569–1573; Semiconductors, 51:11 (2017), 1517–1521
Citation in format AMSBIB
\Bibitem{AkiKliSup17}
\by A.~N.~Akimov, A.~E.~Klimov, S.~P.~Suprun, V.~S.~Epov
\paper Effect of the surface on transport phenomena in PbSnTe : In/BaF$_{2}$ films
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1569--1573
\mathnet{http://mi.mathnet.ru/phts6010}
\crossref{https://doi.org/10.21883/FTP.2017.11.45113.28}
\elib{https://elibrary.ru/item.asp?id=30546404}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1517--1521
\crossref{https://doi.org/10.1134/S1063782617110021}
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