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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1534–1537
DOI: https://doi.org/10.21883/FTP.2017.11.45106.20 (Mi phts6003) 		 
This article is cited in 4 scientific papers (total in 4 papers)

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Semiconductor structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography

V. I. Borisova, N. A. Kuvshinovaa, S. P. Kurochkab, V. E. Sizova, M. V. Stepushkinab, A. G. Temiryazeva

a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
b National University of Science and Technology «MISIS», Moscow
Full-text PDF (204 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2017.11.45106.20
Abstract: Quasi-one-dimensional semiconductor structures with a variable longitudinal potential profile are fabricated by pulse power nanolithography, which is carried out using an atomic force microscope. Structures are fabricated on the basis of AlGaAs/GaAs heterostructures with a deep (130 nm from the surface) twodimensional electron gas. The channel potential profile is formed with the help of sectioned in-plane gates formed on both channel sides. The electrical parameters of the structures measured at temperatures down to 1.5 K confirmed the efficiency of the applied method to fabricate insulating regions with lateral sizes of $\sim$10 nm.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1481–1484
DOI: https://doi.org/10.1134/S1063782617110082
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. I. Borisov, N. A. Kuvshinova, S. P. Kurochka, V. E. Sizov, M. V. Stepushkin, A. G. Temiryazev, “Semiconductor structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1534–1537; Semiconductors, 51:11 (2017), 1481–1484
Citation in format AMSBIB
\Bibitem{BorKuvKur17}
\by V.~I.~Borisov, N.~A.~Kuvshinova, S.~P.~Kurochka, V.~E.~Sizov, M.~V.~Stepushkin, A.~G.~Temiryazev
\paper Semiconductor structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1534--1537
\mathnet{http://mi.mathnet.ru/phts6003}
\crossref{https://doi.org/10.21883/FTP.2017.11.45106.20}
\elib{https://elibrary.ru/item.asp?id=30546397 }
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1481--1484
\crossref{https://doi.org/10.1134/S1063782617110082}
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  • https://www.mathnet.ru/eng/phts/v51/i11/p1534
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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