Study of the influence of Ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures

The results of growing AlN buffer layers for transistors with a high electron mobility by high-temperature ammonia MBE using Ga as a surfactant are presented. The main parameters affecting the growth and defect formation kinetics are efficient flows of precursors and the surfactant as well as the temperature of the substrate, which limits the surfactant flow because of Ga desorption from the surface. In particular, the addition of the Ga flow equal to the Al flow at a substrate temperature of 1150$^\circ$C keeps the growth rate constant, changing its kinetics herewith. This approach allows to increase the surface mobility of adatoms and provides a rapid transition to the 2D growth mode. An electron mobility up to 2000 cm$^2$/(V s) was achieved for heterostructures with a 2D electron gas grown using a surfactant.