|
This article is cited in 4 scientific papers (total in 4 papers)
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017
Thermoelectric effects in nanoscale layers of manganese silicide
I. V. Erofeeva, M. V. Dorokhin, V. P. Lesnikov, Yu. M. Kuznetsov, A. V. Zdoroveyshchev, E. A. Pitirimova Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
The values of the thermoelectric power, layer resistivity and thermal conductivity of a Mn$_{x}$Si$_{1-x}$ nanoscale layer and Mn$_{x}$Si$_{1-x}$/Si superlattice on silicon depending on the growth temperature in the range $T$ = 300–600 K are found experimentally. The contribution of the nanoscale film and substrate to the thermoelectric effect is discussed. The thermoelectric figure of merit of a single manganese-ssilicide layer, superlattice, and layer/substrate system is estimated. The largest figure of merit $ZT$ = 0.59 $\pm$ 0.06 is found for Mn$_{0.2}$Si$_{0.8}$ at $T$ = 600 K.
Received: 27.04.2017 Accepted: 12.05.2017
Citation:
I. V. Erofeeva, M. V. Dorokhin, V. P. Lesnikov, Yu. M. Kuznetsov, A. V. Zdoroveyshchev, E. A. Pitirimova, “Thermoelectric effects in nanoscale layers of manganese silicide”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1456–1461; Semiconductors, 51:11 (2017), 1403–1408
Linking options:
https://www.mathnet.ru/eng/phts5987 https://www.mathnet.ru/eng/phts/v51/i11/p1456
|
Statistics & downloads: |
Abstract page: | 39 | Full-text PDF : | 10 |
|