Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1447–1450
DOI: https://doi.org/10.21883/FTP.2017.11.45088.02 (Mi phts5985) 		 
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots

A. P. Gorshkova, N. S. Volkovabc, P. G. Voronina, A. V. Zdoroveyshchevb, L. A. Istominc, D. A. Pavlova, Yu. V. Usova, S. B. Levichevb

a National Research Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Chemistry Research Institute of N. I. Lobachevsky, State University of Nizhny Novgorod
Full-text PDF (241 kB)
DOI: https://doi.org/10.21883/FTP.2017.11.45088.02
Abstract: The capping of an array of self-assembled InAs/GaAs quantum dots by an InGaAs quantum-well layer leads to an increase in their size due to indium enrichment of the region near the top of the quantum dots, which decreases the energy of the ground-state optical transition in quantum dots by 50 meV and shifts the hole wave function toward the top of the quantum dot.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1395–1398
DOI: https://doi.org/10.1134/S1063782617110136
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. P. Gorshkov, N. S. Volkova, P. G. Voronin, A. V. Zdoroveyshchev, L. A. Istomin, D. A. Pavlov, Yu. V. Usov, S. B. Levichev, “Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1447–1450; Semiconductors, 51:11 (2017), 1395–1398
Citation in format AMSBIB
\Bibitem{GorVolVor17}
\by A.~P.~Gorshkov, N.~S.~Volkova, P.~G.~Voronin, A.~V.~Zdoroveyshchev, L.~A.~Istomin, D.~A.~Pavlov, Yu.~V.~Usov, S.~B.~Levichev
\paper Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1447--1450
\mathnet{http://mi.mathnet.ru/phts5985}
\crossref{https://doi.org/10.21883/FTP.2017.11.45088.02}
\elib{https://elibrary.ru/item.asp?id=30546378}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1395--1398
\crossref{https://doi.org/10.1134/S1063782617110136}
Linking options:
  • https://www.mathnet.ru/eng/phts5985
  • https://www.mathnet.ru/eng/phts/v51/i11/p1447
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:47
    Full-text PDF :16
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024