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XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots
A. P. Gorshkova, N. S. Volkovabc, P. G. Voronina, A. V. Zdoroveyshchevb, L. A. Istominc, D. A. Pavlova, Yu. V. Usova, S. B. Levichevb a National Research Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Chemistry Research Institute of N. I. Lobachevsky, State University of Nizhny Novgorod
Abstract:
The capping of an array of self-assembled InAs/GaAs quantum dots by an InGaAs quantum-well layer leads to an increase in their size due to indium enrichment of the region near the top of the quantum dots, which decreases the energy of the ground-state optical transition in quantum dots by 50 meV and shifts the hole wave function toward the top of the quantum dot.
Received: 27.04.2017 Accepted: 12.05.2017
Citation:
A. P. Gorshkov, N. S. Volkova, P. G. Voronin, A. V. Zdoroveyshchev, L. A. Istomin, D. A. Pavlov, Yu. V. Usov, S. B. Levichev, “Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1447–1450; Semiconductors, 51:11 (2017), 1395–1398
Linking options:
https://www.mathnet.ru/eng/phts5985 https://www.mathnet.ru/eng/phts/v51/i11/p1447
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Abstract page: | 47 | Full-text PDF : | 16 |
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