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XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017
Optical thyristor based on GaAs/InGaP materials
B. N. Zvonkov, N. V. Baidus, S. M. Nekorkin, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, V. E. Kotomina Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
The possibility of creating thyristor structures with external optical control by laser radiation with a wavelength of $\sim$800 nm, based on single-crystal wafers of semi-insulating GaAs and layers of InGaP with the lattice parameter compatible with GaAs, is shown.
Received: 27.04.2017 Accepted: 12.05.2017
Citation:
B. N. Zvonkov, N. V. Baidus, S. M. Nekorkin, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, V. E. Kotomina, “Optical thyristor based on GaAs/InGaP materials”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1443–1446; Semiconductors, 51:11 (2017), 1391–1394
Linking options:
https://www.mathnet.ru/eng/phts5984 https://www.mathnet.ru/eng/phts/v51/i11/p1443
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Statistics & downloads: |
Abstract page: | 24 | Full-text PDF : | 9 |
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