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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1443–1446
DOI: https://doi.org/10.21883/FTP.2017.11.45087.01 (Mi phts5984) 		 
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Optical thyristor based on GaAs/InGaP materials

B. N. Zvonkov, N. V. Baidus, S. M. Nekorkin, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, V. E. Kotomina

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (148 kB)
DOI: https://doi.org/10.21883/FTP.2017.11.45087.01
Abstract: The possibility of creating thyristor structures with external optical control by laser radiation with a wavelength of $\sim$800 nm, based on single-crystal wafers of semi-insulating GaAs and layers of InGaP with the lattice parameter compatible with GaAs, is shown.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1391–1394
DOI: https://doi.org/10.1134/S1063782617110306
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. N. Zvonkov, N. V. Baidus, S. M. Nekorkin, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, V. E. Kotomina, “Optical thyristor based on GaAs/InGaP materials”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1443–1446; Semiconductors, 51:11 (2017), 1391–1394
Citation in format AMSBIB
\Bibitem{ZvoBaiNek17}
\by B.~N.~Zvonkov, N.~V.~Baidus, S.~M.~Nekorkin, O.~V.~Vikhrova, A.~V.~Zdoroveyshchev, A.~V.~Kudrin, V.~E.~Kotomina
\paper Optical thyristor based on GaAs/InGaP materials
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1443--1446
\mathnet{http://mi.mathnet.ru/phts5984}
\crossref{https://doi.org/10.21883/FTP.2017.11.45087.01}
\elib{https://elibrary.ru/item.asp?id=30546377}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1391--1394
\crossref{https://doi.org/10.1134/S1063782617110306}
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