Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 12, Pages 1711–1715
DOI: https://doi.org/10.21883/FTP.2017.12.45191.8239 (Mi phts5980) 		 
Semiconductor physics

Single electron transistor: energy-level broadening effect and thermionic contribution

A. Nasria, A. Boubakera, W. Khaldia, B. Hafsibc, A. Kalboussia

a University of Monastir, Microelectronics and Instrumentation laboratory, Monastir, Tunisia
b Université de Valenciennes et du Hainaut-Cambrésis
c Institut d'Electronique de Microélectronique et de Nanotechnologie, France
Full-text PDF (238 kB)
DOI: https://doi.org/10.21883/FTP.2017.12.45191.8239
Abstract: In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si–QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy–level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I–V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined.
Received: 14.02.2017
Revised: 20.04.2017
English version:
Semiconductors, 2017, Volume 51, Issue 12, Pages 1656–1660
DOI: https://doi.org/10.1134/S1063782617120144
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. Nasri, A. Boubaker, W. Khaldi, B. Hafsi, A. Kalboussi, “Single electron transistor: energy-level broadening effect and thermionic contribution”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1711–1715; Semiconductors, 51:12 (2017), 1656–1660
Citation in format AMSBIB
\Bibitem{NasBouKha17}
\by A.~Nasri, A.~Boubaker, W.~Khaldi, B.~Hafsi, A.~Kalboussi
\paper Single electron transistor: energy-level broadening effect and thermionic contribution
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 12
\pages 1711--1715
\mathnet{http://mi.mathnet.ru/phts5980}
\crossref{https://doi.org/10.21883/FTP.2017.12.45191.8239}
\elib{https://elibrary.ru/item.asp?id=30729672}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 12
\pages 1656--1660
\crossref{https://doi.org/10.1134/S1063782617120144}
Linking options:
  • https://www.mathnet.ru/eng/phts5980
  • https://www.mathnet.ru/eng/phts/v51/i12/p1711
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:45
    Full-text PDF :18
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024