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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 12, Pages 1711–1715
DOI: https://doi.org/10.21883/FTP.2017.12.45191.8239 (Mi phts5980) 		 
Semiconductor physics

Single electron transistor: energy-level broadening effect and thermionic contribution

A. Nasria, A. Boubakera, W. Khaldia, B. Hafsibc, A. Kalboussia

a University of Monastir, Microelectronics and Instrumentation laboratory, Monastir, Tunisia
b Université de Valenciennes et du Hainaut-Cambrésis
c Institut d'Electronique de Microélectronique et de Nanotechnologie, France
Full-text PDF (238 kB)
DOI: https://doi.org/10.21883/FTP.2017.12.45191.8239
Abstract: In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si–QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy–level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I–V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined.
Received: 14.02.2017
Revised: 20.04.2017
English version:
Semiconductors, 2017, Volume 51, Issue 12, Pages 1656–1660
DOI: https://doi.org/10.1134/S1063782617120144
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. Nasri, A. Boubaker, W. Khaldi, B. Hafsi, A. Kalboussi, “Single electron transistor: energy-level broadening effect and thermionic contribution”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1711–1715; Semiconductors, 51:12 (2017), 1656–1660
Citation in format AMSBIB
\Bibitem{NasBouKha17}
\by A.~Nasri, A.~Boubaker, W.~Khaldi, B.~Hafsi, A.~Kalboussi
\paper Single electron transistor: energy-level broadening effect and thermionic contribution
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 12
\pages 1711--1715
\mathnet{http://mi.mathnet.ru/phts5980}
\crossref{https://doi.org/10.21883/FTP.2017.12.45191.8239}
\elib{https://elibrary.ru/item.asp?id=30729672}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 12
\pages 1656--1660
\crossref{https://doi.org/10.1134/S1063782617120144}
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