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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 12, Page 1630
DOI: https://doi.org/10.21883/FTP.2017.12.45176.39 (Mi phts5965) 		 
This article is cited in 4 scientific papers (total in 4 papers)

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Electron effective mass and $g$ factor in wide HgTe quantum wells

S. V. Gudinaa, V. N. Neverova, E. V. Ilchenkoa, A. S. Bogolubskiia, G. I. Kharusa, N. G. Shelushininaa, S. M. Podgornykhab, M. V. Yakuninab, N. N. Mikhailovcd, S. A. Dvoretskiied

a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
c Novosibirsk State University
d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
e Tomsk State University
Full-text PDF (37 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2017.12.45176.39
Abstract: The magnetic-field (0 T $<B<$ 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K $<T<$ 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors $v$ = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor ($\cong$ 80) are obtained.
Received: 27.04.2017
Accepted: 12.05.2017
English version:
Semiconductors, 2018, Volume 52, Issue 12, Pages 12–18
DOI: https://doi.org/10.1134/S1063782618010098
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Gudina, V. N. Neverov, E. V. Ilchenko, A. S. Bogolubskii, G. I. Kharus, N. G. Shelushinina, S. M. Podgornykh, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretskii, “Electron effective mass and $g$ factor in wide HgTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1630; Semiconductors, 52:12 (2018), 12–18
Citation in format AMSBIB
\Bibitem{GudNevIlc17}
\by S.~V.~Gudina, V.~N.~Neverov, E.~V.~Ilchenko, A.~S.~Bogolubskii, G.~I.~Kharus, N.~G.~Shelushinina, S.~M.~Podgornykh, M.~V.~Yakunin, N.~N.~Mikhailov, S.~A.~Dvoretskii
\paper Electron effective mass and $g$ factor in wide HgTe quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 12
\pages 1630
\mathnet{http://mi.mathnet.ru/phts5965}
\crossref{https://doi.org/10.21883/FTP.2017.12.45176.39}
\elib{https://elibrary.ru/item.asp?id=30729657}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 12
\pages 12--18
\crossref{https://doi.org/10.1134/S1063782618010098}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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