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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 1, Pages 35–37
DOI: https://doi.org/10.21883/FTP.2018.01.45315.8359
(Mi phts5937)
 

Electronic properties of semiconductors

Effect of hydrostatic pressure on the static permittivity of germanium

A. M. Musaev

Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia
Abstract: The dependence of the static permittivity of single-crystal germanium on hydrostatic pressure up to $P\approx$ 7.4 GPa is studied experimentally. As the pressure is increased to $P\approx$ 4 GPa, the permittivity of Ge decreases by a factor of $\sim$13 to $\varepsilon$ = 1.22. As the pressure is increased further to $P\approx$ 7 GPa, a moderate increase in $\varepsilon$ to the initial value is observed. In the range 7–7.4 GPa, the permittivity increases to a value larger than 1000. The experimental dependences obtained in the study substantially differ from the previously known dependences.
Funding agency Grant number
Russian Foundation for Basic Research 15-02-05181
Received: 28.06.2016
Accepted: 22.05.2017
English version:
Semiconductors, 2018, Volume 52, Issue 1, Pages 31–33
DOI: https://doi.org/10.1134/S1063782618010141
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. M. Musaev, “Effect of hydrostatic pressure on the static permittivity of germanium”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 35–37; Semiconductors, 52:1 (2018), 31–33
Citation in format AMSBIB
\Bibitem{Mus18}
\by A.~M.~Musaev
\paper Effect of hydrostatic pressure on the static permittivity of germanium
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 1
\pages 35--37
\mathnet{http://mi.mathnet.ru/phts5937}
\crossref{https://doi.org/10.21883/FTP.2018.01.45315.8359}
\elib{https://elibrary.ru/item.asp?id=34982782}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 1
\pages 31--33
\crossref{https://doi.org/10.1134/S1063782618010141}
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