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Electronic properties of semiconductors
Effect of hydrostatic pressure on the static permittivity of germanium
A. M. Musaev Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia
Abstract:
The dependence of the static permittivity of single-crystal germanium on hydrostatic pressure up to $P\approx$ 7.4 GPa is studied experimentally. As the pressure is increased to $P\approx$ 4 GPa, the permittivity of Ge decreases by a factor of $\sim$13 to $\varepsilon$ = 1.22. As the pressure is increased further to $P\approx$ 7 GPa, a moderate increase in $\varepsilon$ to the initial value is observed. In the range 7–7.4 GPa, the permittivity increases to a value larger than 1000. The experimental dependences obtained in the study substantially differ from the previously known dependences.
Received: 28.06.2016 Accepted: 22.05.2017
Citation:
A. M. Musaev, “Effect of hydrostatic pressure on the static permittivity of germanium”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 35–37; Semiconductors, 52:1 (2018), 31–33
Linking options:
https://www.mathnet.ru/eng/phts5937 https://www.mathnet.ru/eng/phts/v52/i1/p35
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Statistics & downloads: |
Abstract page: | 35 | Full-text PDF : | 16 |
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