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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 2, Pages 171–176
DOI: https://doi.org/10.21883/FTP.2018.02.45439.8672
(Mi phts5912)
 

This article is cited in 2 scientific papers (total in 2 papers)

Electronic properties of semiconductors

Electrically active states of charge capture and transfer causing slow recombination in thallium-bromide crystals at low temperatures

V. Kazhukauskas, R. Garbačauskas, S. Savicki

Vilnius University, Vilnius, Lithuania
Full-text PDF (245 kB) Citations (2)
Abstract: TlBr single crystals grown by the Bridgman–Stockbarger method are studied. It is established that frozen-conductivity effects manifest themselves under interband excitation by light at temperatures below 200 K. Herewith, clearly pronounced superlinear dependences of the induced photoconductivity on the strength of the applied electric field manifest themselves. The results of studying thermally stimulated conductivity evidence that these phenomena can be associated with the filling of trap states with thermal activation energies of 0.08–0.12 eV. This state can be removed due to thermal quenching at temperatures of $\gtrsim$ 180 K because of the emptying of energy states with an activation energy of 0.63–0.65 eV filled after optical generation.
Received: 28.06.2017
Accepted: 05.07.2017
English version:
Semiconductors, 2018, Volume 52, Issue 2, Pages 160–164
DOI: https://doi.org/10.1134/S1063782618020057
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Kazhukauskas, R. Garbačauskas, S. Savicki, “Electrically active states of charge capture and transfer causing slow recombination in thallium-bromide crystals at low temperatures”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 171–176; Semiconductors, 52:2 (2018), 160–164
Citation in format AMSBIB
\Bibitem{KazGarSav18}
\by V.~Kazhukauskas, R.~Garba{\v{c}}auskas, S.~Savicki
\paper Electrically active states of charge capture and transfer causing slow recombination in thallium-bromide crystals at low temperatures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 2
\pages 171--176
\mathnet{http://mi.mathnet.ru/phts5912}
\crossref{https://doi.org/10.21883/FTP.2018.02.45439.8672}
\elib{https://elibrary.ru/item.asp?id=32739657}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 2
\pages 160--164
\crossref{https://doi.org/10.1134/S1063782618020057}
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  • https://www.mathnet.ru/eng/phts/v52/i2/p171
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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