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This article is cited in 3 scientific papers (total in 3 papers)
Electronic properties of semiconductors
Dielectric properties and conductivity of Ag-doped TlGaS$_{2}$ single crystals
S. N. Mustafaevaa, S. M. Asadovb, E. M. Kerimovaa a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku
Abstract:
The effect of silver ions (2 mol %) on the dielectric properties and electrical conductivity of TlGaS$_{2}$ single crystals grown by the Bridgman–Stockbarger method is investigated. The experimental results of studying the frequency dispersion of the dielectric coefficients of TlGaS$_{2}$ single crystals (2 mol % Ag) makes it possible to establish the nature of dielectric losses and the charge-transfer mechanism, to evaluate the density of states near the Fermi level, the spread of states, the average hopping time and length, and the concentration of deep traps responsible for ac conductivity. The Ag doping of the TlGaS$_{2}$ single crystals results in an increase in the density of states near the Fermi level and in a decrease in the average hopping time and length.
Received: 17.01.2017 Accepted: 26.06.2017
Citation:
S. N. Mustafaeva, S. M. Asadov, E. M. Kerimova, “Dielectric properties and conductivity of Ag-doped TlGaS$_{2}$ single crystals”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 167–170; Semiconductors, 52:2 (2018), 156–159
Linking options:
https://www.mathnet.ru/eng/phts5911 https://www.mathnet.ru/eng/phts/v52/i2/p167
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