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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 2, Pages 161–166
DOI: https://doi.org/10.21883/FTP.2018.02.45437.8566
(Mi phts5910)
 

This article is cited in 4 scientific papers (total in 4 papers)

Electronic properties of semiconductors

Frequency dependence of the conductivity of disordered semiconductors in the region of the transition to the fixed-range hopping regime

M. A. Ormont, I. P. Zvyagin

Faculty of Physics, Lomonosov Moscow State University
Full-text PDF (205 kB) Citations (4)
Abstract: The effect of hybridization of electron states on the high-frequency conductivity of disordered semiconductors is studied. It is shown that the dependence of the pre-exponential factor of the resonance integral on the intercenter separation in a pair determines the abruptness of the change in conductivity mechanisms near the transition of the frequency dependence of the real part of the conductivity $\sigma_1(\omega)$ from sublinear to quadratic. The abruptness of the change of the conductivity regimes is associated with a rapid decrease in hopping distance with increasing frequency near the transition, which leads to a substantial relative decrease in the contribution from the phononless conductivity component in the variable-range hopping regime with increasing frequency and transition to the fixed-range hopping conductivity regime.
Received: 27.02.2017
Accepted: 22.05.2017
English version:
Semiconductors, 2018, Volume 52, Issue 2, Pages 150–155
DOI: https://doi.org/10.1134/S1063782618020100
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Ormont, I. P. Zvyagin, “Frequency dependence of the conductivity of disordered semiconductors in the region of the transition to the fixed-range hopping regime”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 161–166; Semiconductors, 52:2 (2018), 150–155
Citation in format AMSBIB
\Bibitem{OrmZvy18}
\by M.~A.~Ormont, I.~P.~Zvyagin
\paper Frequency dependence of the conductivity of disordered semiconductors in the region of the transition to the fixed-range hopping regime
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 2
\pages 161--166
\mathnet{http://mi.mathnet.ru/phts5910}
\crossref{https://doi.org/10.21883/FTP.2018.02.45437.8566}
\elib{https://elibrary.ru/item.asp?id=32739655}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 2
\pages 150--155
\crossref{https://doi.org/10.1134/S1063782618020100}
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  • https://www.mathnet.ru/eng/phts/v52/i2/p161
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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