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This article is cited in 4 scientific papers (total in 4 papers)
Electronic properties of semiconductors
Frequency dependence of the conductivity of disordered semiconductors in the region of the transition to the fixed-range hopping regime
M. A. Ormont, I. P. Zvyagin Faculty of Physics, Lomonosov Moscow State University
Abstract:
The effect of hybridization of electron states on the high-frequency conductivity of disordered semiconductors is studied. It is shown that the dependence of the pre-exponential factor of the resonance integral on the intercenter separation in a pair determines the abruptness of the change in conductivity mechanisms near the transition of the frequency dependence of the real part of the conductivity $\sigma_1(\omega)$ from sublinear to quadratic. The abruptness of the change of the conductivity regimes is associated with a rapid decrease in hopping distance with increasing frequency near the transition, which leads to a substantial relative decrease in the contribution from the phononless conductivity component in the variable-range hopping regime with increasing frequency and transition to the fixed-range hopping conductivity regime.
Received: 27.02.2017 Accepted: 22.05.2017
Citation:
M. A. Ormont, I. P. Zvyagin, “Frequency dependence of the conductivity of disordered semiconductors in the region of the transition to the fixed-range hopping regime”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 161–166; Semiconductors, 52:2 (2018), 150–155
Linking options:
https://www.mathnet.ru/eng/phts5910 https://www.mathnet.ru/eng/phts/v52/i2/p161
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