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This article is cited in 16 scientific papers (total in 16 papers)
Semiconductor physics
Modification of photovoltaic laser-power ($\lambda$ = 808 nm) converters grown by LPE
V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, N. Kh. Timoshina, M. Z. Shvarts Ioffe Institute, St. Petersburg
Abstract:
Laser-power converters for the wavelength $\lambda$ = 808 nm are fabricated by liquid-phase epitaxy (LPE) on the basis of $n$-Al$_{0.07}$Ga$_{0.93}$As-$p$-Al$_{0.07}$ Ga$_{0.93}$As-$p$-Al$_{0.25}$Ga$_{0.75}$As single-junction heterostructures. The converters are tested with uniform (pulse simulator) and partly nonuniform (laser beam) illumination distribution over the photoreceiving surface. In the former case, a monochromatic efficiency of $\eta$ = 53.1% is achieved for samples with an area of $S$ = 4 cm$^2$ at a power of 1.2 W. At $S$ = 10.2 mm$^2$ the efficiency is 58.3% at a laser power of 0.7 W.
Received: 04.10.2017 Accepted: 18.10.2017
Citation:
V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, N. Kh. Timoshina, M. Z. Shvarts, “Modification of photovoltaic laser-power ($\lambda$ = 808 nm) converters grown by LPE”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 385–389; Semiconductors, 52:3 (2018), 366–370
Linking options:
https://www.mathnet.ru/eng/phts5902 https://www.mathnet.ru/eng/phts/v52/i3/p385
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