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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 3, Pages 359–365
DOI: https://doi.org/10.21883/FTP.2018.03.45622.8550 (Mi phts5898) 		 
Semiconductor physics

Optimal doping of diode current interrupters

A. S. Kyuregyan

Russian Electrotechnical Institute Named after V. I. Lenin
Full-text PDF (223 kB)
DOI: https://doi.org/10.21883/FTP.2018.03.45622.8550
Abstract: An analytical solution to the problem of a decrease in energy losses $\Omega$ in diode current interrupters is derived for the stage of recovery of the blocking ability due to optimization of the dopant distribution $N (x)$ over the structure thickness. The distribution $N(x)$ close to optimal is found; it makes it possible to decrease $\Omega$ by 30–55% compared with standard design interrupters with homogeneously doped high-resistivity layers.
Funding agency Grant number
Russian Foundation for Basic Research 16-08-01292
Received: 13.02.2017
Accepted: 07.03.2017
English version:
Semiconductors, 2018, Volume 52, Issue 3, Pages 341–347
DOI: https://doi.org/10.1134/S1063782618030144
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Kyuregyan, “Optimal doping of diode current interrupters”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 359–365; Semiconductors, 52:3 (2018), 341–347
Citation in format AMSBIB
\Bibitem{Kyu18}
\by A.~S.~Kyuregyan
\paper Optimal doping of diode current interrupters
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 3
\pages 359--365
\mathnet{http://mi.mathnet.ru/phts5898}
\crossref{https://doi.org/10.21883/FTP.2018.03.45622.8550}
\elib{https://elibrary.ru/item.asp?id=32739689}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 3
\pages 341--347
\crossref{https://doi.org/10.1134/S1063782618030144}
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