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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 3, Pages 349–352
DOI: https://doi.org/10.21883/FTP.2018.03.45620.8570 (Mi phts5896) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Effect of low $\gamma$-radiation doses on the optical properties of porous silicon

D. I. Bilenko, O. Ya. Belobrovaya, D. V. Terin, V. V. Galushka, I. V. Galushka, A. E. Zharkova, V. P. Polyanskaya, V. I. Sidorov, I. T. Yagudin

Saratov State University
Full-text PDF (105 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2018.03.45620.8570
Abstract: The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of $\gamma$ photons from a $^{226}$Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation
Russian Foundation for Basic Research 18-07-00752
Received: 01.03.2017
Accepted: 29.06.2017
English version:
Semiconductors, 2018, Volume 52, Issue 3, Pages 331–334
DOI: https://doi.org/10.1134/S1063782618030077
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. I. Bilenko, O. Ya. Belobrovaya, D. V. Terin, V. V. Galushka, I. V. Galushka, A. E. Zharkova, V. P. Polyanskaya, V. I. Sidorov, I. T. Yagudin, “Effect of low $\gamma$-radiation doses on the optical properties of porous silicon”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 349–352; Semiconductors, 52:3 (2018), 331–334
Citation in format AMSBIB
\Bibitem{BilBelTer18}
\by D.~I.~Bilenko, O.~Ya.~Belobrovaya, D.~V.~Terin, V.~V.~Galushka, I.~V.~Galushka, A.~E.~Zharkova, V.~P.~Polyanskaya, V.~I.~Sidorov, I.~T.~Yagudin
\paper Effect of low $\gamma$-radiation doses on the optical properties of porous silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 3
\pages 349--352
\mathnet{http://mi.mathnet.ru/phts5896}
\crossref{https://doi.org/10.21883/FTP.2018.03.45620.8570}
\elib{https://elibrary.ru/item.asp?id=32739687}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 3
\pages 331--334
\crossref{https://doi.org/10.1134/S1063782618030077}
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  • https://www.mathnet.ru/eng/phts/v52/i3/p349
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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