|
This article is cited in 2 scientific papers (total in 2 papers)
Electronic properties of semiconductors
Deep radiation-induced defect centers created by a fast neutron flux in CdZnTe single crystals
S. V. Plyatsko, L. V. Rashkovetskyi Institute of Semiconductor Physics NAS, Kiev
Abstract:
The effect of a fast neutron flux ($\Phi$ = 10$^{14}$-10$^{15}$ cm$^{-2}$) on the electrical and photoluminescence properties of $p$-CdZnTe single crystals is studied. Isothermal annealing is performed ($T$ = 400–500 K), and the activation energy of the dissociation of radiation-induced defects is determined at $E_D\approx$ 0.75 eV.
Received: 30.08.2017 Accepted: 05.09.2017
Citation:
S. V. Plyatsko, L. V. Rashkovetskyi, “Deep radiation-induced defect centers created by a fast neutron flux in CdZnTe single crystals”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 322–326; Semiconductors, 52:3 (2018), 305–309
Linking options:
https://www.mathnet.ru/eng/phts5891 https://www.mathnet.ru/eng/phts/v52/i3/p322
|
Statistics & downloads: |
Abstract page: | 30 | Full-text PDF : | 14 |
|