Electrical breakdown in pure $n$- and $p$-Si

The results of calculations of the dependences of the kinetic coefficients of impact ionization and thermal recombination on an electric field in pure silicon are presented. By analogy with germanium, the dependences of the breakdown field $E_{\operatorname{br}}$ on the material compensation ratio $K$ are calculated. The validity of such calculation is justified in detail. The $E_{\operatorname{br}}(K)$ curves are presented and compared with experimental data in the weak-compensation region. Matching with experimental results at which satisfactory agreement between theory and experiment is observed is performed.