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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4, Page 482 (Mi phts5878)  

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Quantum wells, Quantum wires, Quantum dots, band structure

Zeeman splitting of electron spectrum in HgTe quantum wells near the Dirac point

A. V. Germanenkoa, G. M. Minkovab, A. A. Sherstobitovab, O. E. Ruta, S. A. Dvoretskic, N. N. Mikhailovc

a School of Natural Sciences and Mathematics, Ural Federal University, 620002 Ekaterinburg, Russia
b Institute of Metal Physics, Russian Academy of Sciences, 620990 Ekaterinburg, Russia
c Institute of Semiconductor Physics, Russian Academy of Sciences, 630090 Novosibirsk, Russia
Abstract: The Zeeman splitting of the conduction band in the HgTe quantum wells both with normal and inverted spectrum has been studied experimentally in a wide electron density range. The simultaneous analysis of the Shubnikov–de Haas oscillations in low magnetic fields at different tilt angles and of the shape of the oscillations in moderate magnetic fields gives a possibility to find the ratio of the Zeeman splitting to the orbital one and anisotropy of $g$-factor. It is shown that the ratios of the Zeeman splitting to the orbital one are close to each other for both types of structures, with a normal and inverted spectrum and they are close enough to the values calculated within $kP$ method. In contrast, the values of $g$-factor anisotropy in the structures with normal and inverted spectra are strongly different and for both cases differ significantly from the calculated ones. We assume that such disagreement with calculations is a result of the interface inversion asymmetry in the HgTe quantum well, which is not taken into account in the $kP$ calculations.
Funding agency Grant number
Russian Foundation for Basic Research 16-02-00516
Ministry of Education and Science of the Russian Federation 02.A03.21.0006
3.9534.2017/ВР
The work has been supported in part by the Russian Foundation for Basic Research (Grant № 16-02-00516), by Act 211 Government of the Russian Federation, agreement № 02.A03.21.0006, and by the Ministry of Education and Science of the Russian Federation under Project № 3.9534.2017/BP.
English version:
Semiconductors, 2018, Volume 52, Issue 4, Pages 519–522
DOI: https://doi.org/10.1134/S1063782618040152
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. V. Germanenko, G. M. Minkov, A. A. Sherstobitov, O. E. Rut, S. A. Dvoretski, N. N. Mikhailov, “Zeeman splitting of electron spectrum in HgTe quantum wells near the Dirac point”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 482; Semiconductors, 52:4 (2018), 519–522
Citation in format AMSBIB
\Bibitem{GerMinShe18}
\by A.~V.~Germanenko, G.~M.~Minkov, A.~A.~Sherstobitov, O.~E.~Rut, S.~A.~Dvoretski, N.~N.~Mikhailov
\paper Zeeman splitting of electron spectrum in HgTe quantum wells near the Dirac point
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 4
\pages 482
\mathnet{http://mi.mathnet.ru/phts5878}
\elib{https://elibrary.ru/item.asp?id=32740477}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 4
\pages 519--522
\crossref{https://doi.org/10.1134/S1063782618040152}
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