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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4, Page 480 (Mi phts5876)  

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Quantum wells, Quantum wires, Quantum dots, band structure

Red single-photon emission from InAs/AlGaAs quantum dots

M. V. Rakhlina, K. G. Belyaeva, G. V. Klimkoa, I. S. Mukhinbc, S. V. Ivanova, A. A. Toropova

a Ioffe Institute, 194021 St. Petersburg, Russia
b St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
c ITMO University, 197101 St. Petersburg, Russia
Abstract: We report on single-photon emission of InAs/AlGaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. By varying the growth conditions the QDs luminescence could be tuned over a wide wavelength range from 0.64 to 1 $\mu$m, including red part of the visible spectrum. Emission properties of individual QDs are investigated by micro-photoluminescence ($\mu$-PL) spectroscopy using 500-nm-size etched mesa structures. Autocorrelation functions of photons from single QDs, measured in the wide spectral range demonstrate antibunching effect at zero delay time with a value of $g^{(2)}(0)\sim$ 0.17 that is a clear evidence of non-classical light.
Funding agency Grant number
Russian Science Foundation 14-22-00107
The authors gratefully acknowledge the financial support of the Russian Science Foundation (project 14-22-00107)
English version:
Semiconductors, 2018, Volume 52, Issue 4, Pages 511–513
DOI: https://doi.org/10.1134/S1063782618040243
Bibliographic databases:
Document Type: Article
Language: English
Citation: M. V. Rakhlin, K. G. Belyaev, G. V. Klimko, I. S. Mukhin, S. V. Ivanov, A. A. Toropov, “Red single-photon emission from InAs/AlGaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 480; Semiconductors, 52:4 (2018), 511–513
Citation in format AMSBIB
\Bibitem{RakBelKli18}
\by M.~V.~Rakhlin, K.~G.~Belyaev, G.~V.~Klimko, I.~S.~Mukhin, S.~V.~Ivanov, A.~A.~Toropov
\paper Red single-photon emission from InAs/AlGaAs quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 4
\pages 480
\mathnet{http://mi.mathnet.ru/phts5876}
\elib{https://elibrary.ru/item.asp?id=32740475}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 4
\pages 511--513
\crossref{https://doi.org/10.1134/S1063782618040243}
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