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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4, Page 467 (Mi phts5863)  
This article is cited in 2 scientific papers (total in 2 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Optoelectronics, optical properties

Purcell effect in Tamm plasmon structures with QD emitter

A. R. Gubaidullinab, C. Symondsb, J. Bellessab, K. A. Ivanovac, E. D. Kolykhalovaade, M. E. Sasine, G. Pozinaf, M. A. Kaliteevskiacd

a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
b Univ Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622, LYON, France
c ITMO University, 197101 St. Petersburg, Russia
d St. Petersburg Scientific Center, 199034 St. Petersburg, Russia
e Ioffe Institute, 194021 St. Petersburg, Russia
f Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden
Full-text PDF (30 kB) Citations (2)
Abstract: We study Tamm plasmon structure based on GaAs/Al$_{0.95}$GaAs distributed Bragg reflector covered by thin silver layer, with active area formed by InAs quantum dots. We have measured the spectral and angular characteristics of photoluminescence and performed theoretical calculation of the spontaneous emission rate (modal Purcell factor) in the structure by using $S$-quantization formalism. We show that for Tamm plasmon mode the spontaneous emission can be enhanced by more than an order of magnitude, despite absorption in metallic layer.
Funding agency Grant number
Russian Science Foundation 16-12-10503
Agence Nationale de la Recherche
Swedish Research Council
Russian Academy of Sciences - Federal Agency for Scientific Organizations 1.1.4.6
The work was supported by Russian Science Foundation grant N 16-12-10503. CS and JB acknowledge financial support from Agence Nationale de la Recherche (ANR) on ANR project NEHMESIS and FP7 project HyMeCav. GP acknowledge the Swedish Research Council (VR). KI acknowledge support Presidium of RAS grant 1.1.4.6 “Optoelectronic devices based on Tamm plasmons”.
English version:
Semiconductors, 2018, Volume 52, Issue 4, Pages 452–457
DOI: https://doi.org/10.1134/S1063782618040164
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. R. Gubaidullin, C. Symonds, J. Bellessa, K. A. Ivanov, E. D. Kolykhalova, M. E. Sasin, G. Pozina, M. A. Kaliteevski, “Purcell effect in Tamm plasmon structures with QD emitter”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 467; Semiconductors, 52:4 (2018), 452–457
Citation in format AMSBIB
\Bibitem{GubSymBel18}
\by A.~R.~Gubaidullin, C.~Symonds, J.~Bellessa, K.~A.~Ivanov, E.~D.~Kolykhalova, M.~E.~Sasin, G.~Pozina, M.~A.~Kaliteevski
\paper Purcell effect in Tamm plasmon structures with QD emitter
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 4
\pages 467
\mathnet{http://mi.mathnet.ru/phts5863}
\elib{https://elibrary.ru/item.asp?id=32740462}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 4
\pages 452--457
\crossref{https://doi.org/10.1134/S1063782618040164}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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