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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4, Page 466 (Mi phts5862)  
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Optoelectronics, optical properties

Optical properties of AlGaAs/GaAs resonant Bragg structure at the second quantum state

V. V. Chaldyshevabc, E. V. Kundelevac, A. N. Poddubnya, A. P. Vasil'eva, M. A. Yagovkinaa, Y. Chend, N. Maharjand, Z. Liud, M. L. Nakarmid, N. M. Shakyae

a Ioffe Institute, 194021 St. Petersburg, Russia
b Peter the Great St. Petersburg Polytechnic University (SPbPU), 195251 St. Petersburg, Russia
c ITMO University, 197101 St. Petersburg, Russia
d Brooklyn College and the Graduate Center of the City University of New York, Brooklyn, NY 11210, USA
e New York University-Tandon School of Engineering, Brooklyn, NY 11201, USA
Full-text PDF (31 kB)
Abstract: Photoluminescence, optical reflectance and electro-reflectance spectroscopies were employed to study an AlGaAs/GaAs multiple-quantum-well based resonant Bragg structure, which was designed to match optical Bragg resonance with the exciton-polariton resonance at the second quantum state in the GaAs quantum wells. The structure with 60 periods of AlGaAs/GaAs quantum wells was grown on a semi-insulating substrate by molecular beam epitaxy. Broad and enhanced optical and electro-reflectance features were observed when the Bragg resonance was tuned to the second quantum state of the GaAs quantum well excitons manifesting an enhancement of the light-matter interaction under double-resonance conditions. By applying an alternating electric field, we revealed electro-reflectance features related to the x(e2-hh2) and x(e2-hh1) excitons. The excitonic transition x(e2-hh1), which is prohibited at zero electric field, was allowed by a DC bias due to brake of symmetry and increased overlap of the electron and hole wave functions caused by electric field.
Funding agency Grant number
Russian Academy of Sciences - Federal Agency for Scientific Organizations
PSC-CUNY
Ministry of Education and Science of the Russian Federation 14.621.21.0013
This research at the Ioffe Institute was supported by the Russian Federal Agency of Scientific Organizations. It was also supported by the PSC-CUNY grant at Brooklyn College. The XRD research was carried out at the Joint Research Center “Material science and characterization in advanced technology” under the financial support by the Ministry of Education and Science of the Russian Federation (Agreement 14.621.21.0013, 28.18.2017)
English version:
Semiconductors, 2018, Volume 52, Issue 4, Pages 447–451
DOI: https://doi.org/10.1134/S1063782618040097
Bibliographic databases:
Document Type: Article
Language: English
Citation: V. V. Chaldyshev, E. V. Kundelev, A. N. Poddubny, A. P. Vasil'ev, M. A. Yagovkina, Y. Chen, N. Maharjan, Z. Liu, M. L. Nakarmi, N. M. Shakya, “Optical properties of AlGaAs/GaAs resonant Bragg structure at the second quantum state”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 466; Semiconductors, 52:4 (2018), 447–451
Citation in format AMSBIB
\Bibitem{ChaKunPod18}
\by V.~V.~Chaldyshev, E.~V.~Kundelev, A.~N.~Poddubny, A.~P.~Vasil'ev, M.~A.~Yagovkina, Y.~Chen, N.~Maharjan, Z.~Liu, M.~L.~Nakarmi, N.~M.~Shakya
\paper Optical properties of AlGaAs/GaAs resonant Bragg structure at the second quantum state
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 4
\pages 466
\mathnet{http://mi.mathnet.ru/phts5862}
\elib{https://elibrary.ru/item.asp?id=32740461}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 4
\pages 447--451
\crossref{https://doi.org/10.1134/S1063782618040097}
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