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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4, Pages 439–445 (Mi phts5857)  

This article is cited in 2 scientific papers (total in 2 papers)

Structural, mechanical and thermodynamic properties of Cu$_{2}$CoXs$_{4}$ (X = Si, Ge, Sn) studied by a density functional theory method

Yu. J. Dong, Ya. L. Gao

School of Science and Technology, Xinyang University, Xinyang, People’s Republic of China
Full-text PDF (400 kB) Citations (2)
Abstract: In the paper, we will investigate the basic physical properties of Cu$_{2}$CoXS$_{4}$ (X = Si, Ge, Sn) by using the density functional theory approach. The calculated lattice parameters are in good correspondence with the theoretical data, and the chosen theoretical method is proved to be reliable. In the first part, the Mulliken population analysis indicates the bonds between $S$ atoms and other three atoms in Cu$_{2}$CoXS$_{4}$ (X = Si, Ge, Sn) exhibit the feature of covalent bond. And then, the calculated elastic constants prove the mechanical stability of Cu$_{2}$CoXS$_{4}$ (X = Si, Ge, Sn) in I $\bar4$2m structure. Results are given for B/G and $A^{U}$ reveal Cu$_{2}$CoXS$_{4}$ (X = Si, Ge, Sn) can behave as a ductile and elastic material. Finally, the pressure and temperature dependence of heat capacity, thermal expansion, entropy and Debye temperature in the rang from 0 to 1000 K and from 0 GPa to 50 GPa are also reported in this study.
Received: 30.09.2017
Revised: 20.12.2017
English version:
Semiconductors, 2018, Volume 52, Issue 4, Pages 414–419
DOI: https://doi.org/10.1134/S1063782618040127
Bibliographic databases:
Document Type: Article
Language: English
Citation: Yu. J. Dong, Ya. L. Gao, “Structural, mechanical and thermodynamic properties of Cu$_{2}$CoXs$_{4}$ (X = Si, Ge, Sn) studied by a density functional theory method”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 439–445; Semiconductors, 52:4 (2018), 414–419
Citation in format AMSBIB
\Bibitem{DonGao18}
\by Yu.~J.~Dong, Ya.~L.~Gao
\paper Structural, mechanical and thermodynamic properties of Cu$_{2}$CoXs$_{4}$ (X = Si, Ge, Sn) studied by a density functional theory method
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 4
\pages 439--445
\mathnet{http://mi.mathnet.ru/phts5857}
\elib{https://elibrary.ru/item.asp?id=32740456}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 4
\pages 414--419
\crossref{https://doi.org/10.1134/S1063782618040127}
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  • https://www.mathnet.ru/eng/phts/v52/i4/p439
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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