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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 520
(Mi phts5846)
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This article is cited in 2 scientific papers (total in 2 papers)
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology
Concentric GaAs nanorings growth modelling
A. G. Nastovjaka, I. G. Neizvestnyab, M. A. Vasilenkoa, N. L. Shwartzab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia
b Novosibirsk State Technical University, 630073 Novosibirsk, Russia
Abstract:
The nanostructures formation process using the droplet epitaxy technique was investigated by Monte Carlo simulation. The simulation was fulfilled for two-dimensional and three-dimensional geometry substrates. The nanostructures morphology dependence on the growth temperature was presented. Crystal clusters, single and double rings were observed. The nanostructures shape was shown to be determined by the gallium diffusion length. The conditions of double rings formation during the droplet epitaxy were considered using analytical and numerical approaches. The factors that determine the rings location and shape were analyzed. The growth morphology was demonstrated to be dependent on the initial distance $L$ between the droplets. The double ring formation was possible at a low droplet density only, when the As-stabilized region could be created between the droplets.
Citation:
A. G. Nastovjak, I. G. Neizvestny, M. A. Vasilenko, N. L. Shwartz, “Concentric GaAs nanorings growth modelling”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 520; Semiconductors, 52:5 (2018), 639–644
Linking options:
https://www.mathnet.ru/eng/phts5846 https://www.mathnet.ru/eng/phts/v52/i5/p520
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Abstract page: | 30 | Full-text PDF : | 5 |
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