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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 519 (Mi phts5845)  

This article is cited in 1 scientific paper (total in 1 paper)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Alternative technology for creating nanostructures using Dip Pen Nanolithography

A. V. Lukyanenkoab, T. E. Smolyarovaab

a Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 660036 Krasnoyarsk, Russia
b Siberian Federal University, 660041 Krasnoyarsk, Russia
Full-text PDF (27 kB) Citations (1)
Abstract: For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive and have natural size limitations, not allowing the production of structures with an extremely small lateral limitation. Therefore, an intensive search was conducted for alternative methods for creating submicron resolution structures. Especially attractive one is the possibility of self-organization effects utilization, where the nanostructure of a certain size is formed under the influence of internal forces. The dip pen nanolithography method based on a scanning probe microscope uses a directwrite technology and allows one to carry out a playback of small size structures with high accuracy. In the experiment, a substrate coated with Au (15 nm) using a DPN technique is applied to the polymer to form a desired pattern nano-sized channel. The experiment was conducted using a pointed probe SiN, coated MHA-Acetonitrile, on the Si(111)/Fe$_3$Si/Au structure.
Funding agency Grant number
Russian Foundation for Basic Research 16-42-243046
16-42-242036
16-42-243060
The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects No 16-42-243046, 16-42-242036 and 16-42-243060.
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 636–638
DOI: https://doi.org/10.1134/S1063782618050202
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. V. Lukyanenko, T. E. Smolyarova, “Alternative technology for creating nanostructures using Dip Pen Nanolithography”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 519; Semiconductors, 52:5 (2018), 636–638
Citation in format AMSBIB
\Bibitem{LukSmo18}
\by A.~V.~Lukyanenko, T.~E.~Smolyarova
\paper Alternative technology for creating nanostructures using Dip Pen Nanolithography
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 519
\mathnet{http://mi.mathnet.ru/phts5845}
\elib{https://elibrary.ru/item.asp?id=32740383}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 636--638
\crossref{https://doi.org/10.1134/S1063782618050202}
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  • https://www.mathnet.ru/eng/phts/v52/i5/p519
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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