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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 515 (Mi phts5841)  
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands

E. A. Evropeytsev, A. N. Semenov, D. V. Nechaev, V. N. Zhmerik, V. Kh. Kaibyshev, S. I. Troshkov, P. N. Brunkov, A. A. Usikova, S. V. Ivanov, A. A. Toropov

Ioffe Institute, 194021 St. Petersburg, Russia
Full-text PDF (28 kB)
Abstract: We report on fabrication and studies of composite heterostuctures consisting of an Al$_{0.55}$Ga$_{0.45}$N/Al$_{0.8}$Ga$_{0.2}$N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on $c$-sapphire substrates. The influence of a substrate temperature varied between 320 and 700$^\circ$C on the size and density of the deposited Al nanoislands is evaluated. The effect of Al nanoislands on decay kinetics of the quantum well middle-ultraviolet photoluminescence has been investigated by time resolved photoluminescence. The samples with the maximum density of Al nanoislands of 10$^8$ cm$^{-2}$ and lateral dimensions in the range of 100–500 nm demonstrated shortening of the photoluminescence lifetime, induced by interaction of the emitting quantum well and the plasmonic metal particles.
Funding agency Grant number
Russian Foundation for Basic Research 15-02-05206
Russian Science Foundation 14-22-00107
This work has been supported in part by RFBR 15-02-05206. The development of the MBE tech- nology and samples growth was supported by the Russian Science Foundation (project 14-22-00107).
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 622–624
DOI: https://doi.org/10.1134/S1063782618050056
Bibliographic databases:
Document Type: Article
Language: English
Citation: E. A. Evropeytsev, A. N. Semenov, D. V. Nechaev, V. N. Zhmerik, V. Kh. Kaibyshev, S. I. Troshkov, P. N. Brunkov, A. A. Usikova, S. V. Ivanov, A. A. Toropov, “Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 515; Semiconductors, 52:5 (2018), 622–624
Citation in format AMSBIB
\Bibitem{EvrSemNec18}
\by E.~A.~Evropeytsev, A.~N.~Semenov, D.~V.~Nechaev, V.~N.~Zhmerik, V.~Kh.~Kaibyshev, S.~I.~Troshkov, P.~N.~Brunkov, A.~A.~Usikova, S.~V.~Ivanov, A.~A.~Toropov
\paper Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 515
\mathnet{http://mi.mathnet.ru/phts5841}
\elib{https://elibrary.ru/item.asp?id=32740379}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 622--624
\crossref{https://doi.org/10.1134/S1063782618050056}
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