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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 513 (Mi phts5839)  
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Molecular beam epitaxy of materials interfaces with atomic precision

Klaus H. Ploog

Paul Drude Institute for Solid State Electronics, 101117 Berlin, Germany
Full-text PDF (19 kB)
Abstract: In this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2$D$ electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 615–617
DOI: https://doi.org/10.1134/S1063782618050238
Bibliographic databases:
Document Type: Article
Language: English
Citation: Klaus H. Ploog, “Molecular beam epitaxy of materials interfaces with atomic precision”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 513; Semiconductors, 52:5 (2018), 615–617
Citation in format AMSBIB
\Bibitem{Plo18}
\by Klaus~H.~Ploog
\paper Molecular beam epitaxy of materials interfaces with atomic precision
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 513
\mathnet{http://mi.mathnet.ru/phts5839}
\elib{https://elibrary.ru/item.asp?id=32740377 }
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 615--617
\crossref{https://doi.org/10.1134/S1063782618050238}
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