Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 510 (Mi phts5836)  
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Characterization

The features of GaAs nanowire SEM images

I. P. Soshnikovabc, K. P. Kotlyarad, N. A. Bertb, D. A. Kirilenkobe, A. D. Bouravlevabc, G. E. Cirlinabcd

a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
b Ioffe Institute, 194021 St. Petersburg, Russia
c Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103 St. Petersburg, Russia
d St. Petersburg State University, 199034 St. Petersburg, Russia
e ITMO University, 197101 St. Petersburg, Russia
Full-text PDF (27 kB)
Abstract: The detailed study of GaAs nanowires synthesized by molecular beam epitaxy performed by scanning electron microscopy allowed to reveal the presence of specific contrast in the images obtained. To understand the causes of the phenomenon the transmission electron microscopy of nanowire crystal structure was carried out. The results showed that it could be caused by the segments having polytypic crystal phase. It was also confirmed by the modelling of the electron beam scattering on such nanowire arrays.
Funding agency Grant number
Russian Foundation for Basic Research 15-07-06964
13-02-12031 офи-м
Russian Science Foundation 14-12-00393
Russian Academy of Sciences - Federal Agency for Scientific Organizations
The work is supported Russian foundation for Basic Research (15-07-06964, 13-02-12031 ofi-m) and Russian Science Foundation (14-12-00393) and Program of Russian Academy of Science “Nanostructures”.
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 605–608
DOI: https://doi.org/10.1134/S1063782618050317
Bibliographic databases:
Document Type: Article
Language: English
Citation: I. P. Soshnikov, K. P. Kotlyar, N. A. Bert, D. A. Kirilenko, A. D. Bouravlev, G. E. Cirlin, “The features of GaAs nanowire SEM images”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 510; Semiconductors, 52:5 (2018), 605–608
Citation in format AMSBIB
\Bibitem{SosKotBer18}
\by I.~P.~Soshnikov, K.~P.~Kotlyar, N.~A.~Bert, D.~A.~Kirilenko, A.~D.~Bouravlev, G.~E.~Cirlin
\paper The features of GaAs nanowire SEM images
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 510
\mathnet{http://mi.mathnet.ru/phts5836}
\elib{https://elibrary.ru/item.asp?id=32740374 }
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 605--608
\crossref{https://doi.org/10.1134/S1063782618050317}
Linking options:
  • https://www.mathnet.ru/eng/phts5836
  • https://www.mathnet.ru/eng/phts/v52/i5/p510
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:31
    Full-text PDF :5
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024