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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 509 (Mi phts5835)  
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Characterization

Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate

I. V. Shtromabc, N. G. Filosofovc, V. F. Agekyanc, M. B. Smirnovc, A. Yu. Serovc, R. R. Reznikabd, K. E. Kudryavtseve, G. E. Cirlinabd

a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
b Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103 St. Petersburg, Russia
c St. Petersburg State University, 199034 St. Petersburg, Russia
d ITMO University, 197101 St. Petersburg, Russia
e Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
Full-text PDF (28 kB)
Abstract: The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.2483.2017/ПЧ
National Science Centre, Poland UMO-2017/25/B/ST3/02966
DEC-2014/14/M/ST3/00484
We are grateful for the support of the Ministry of education and science of the Russian Federation (state task, project No 16.2483.2017/PCh). This work was supported by the National Science Center (Poland) trough Grands No UMO-2017/25/B/ST3/02966 and DEC-2014/14/M/ST3/00484.
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 602–604
DOI: https://doi.org/10.1134/S1063782618050299
Bibliographic databases:
Document Type: Article
Language: English
Citation: I. V. Shtrom, N. G. Filosofov, V. F. Agekyan, M. B. Smirnov, A. Yu. Serov, R. R. Reznik, K. E. Kudryavtsev, G. E. Cirlin, “Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 509; Semiconductors, 52:5 (2018), 602–604
Citation in format AMSBIB
\Bibitem{ShtFilAge18}
\by I.~V.~Shtrom, N.~G.~Filosofov, V.~F.~Agekyan, M.~B.~Smirnov, A.~Yu.~Serov, R.~R.~Reznik, K.~E.~Kudryavtsev, G.~E.~Cirlin
\paper Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 509
\mathnet{http://mi.mathnet.ru/phts5835}
\elib{https://elibrary.ru/item.asp?id=32740373}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 602--604
\crossref{https://doi.org/10.1134/S1063782618050299}
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