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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 508 (Mi phts5834)  

This article is cited in 3 scientific papers (total in 3 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Characterization

TiN nanoporous electrode covered by single cell as bio-electronic sensor of radiation hazard

D. D. Stupin

St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
Full-text PDF (26 kB) Citations (3)
Abstract: Here we demonstrate a simple label-free bio-electronic radiation (ultra-violet) hazard detector based on non-destructive electrical impedance spectroscopy technique with a single living cell as a sensing element. Radiation results in wrong cell’s functioning and, as corollary, cell’s membrane distortion. The latter results in impedance shift for the electrode covered by the cell. The additional sensitivity of impedance shift is achieved by the simultaneous usage of the TiN porous electrodes and adaptive filtering for impedance data processing. The main advantage of the proposed sensor with respect to purely physical and/or chemical sensors is high selectivity: it a priory reacts only on the dangerous for living beings radiation.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.9790.2017/БЧ
This study was funded by Ministry of Education and Science of Russian Federation, governmental order N 16.9790.2017/BCh.
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 600–601
DOI: https://doi.org/10.1134/S1063782618050329
Bibliographic databases:
Document Type: Article
Language: English
Citation: D. D. Stupin, “TiN nanoporous electrode covered by single cell as bio-electronic sensor of radiation hazard”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 508; Semiconductors, 52:5 (2018), 600–601
Citation in format AMSBIB
\Bibitem{Stu18}
\by D.~D.~Stupin
\paper TiN nanoporous electrode covered by single cell as bio-electronic sensor of radiation hazard
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 508
\mathnet{http://mi.mathnet.ru/phts5834}
\elib{https://elibrary.ru/item.asp?id=32740372}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 600--601
\crossref{https://doi.org/10.1134/S1063782618050329}
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  • https://www.mathnet.ru/eng/phts/v52/i5/p508
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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