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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 505 (Mi phts5831)  
This article is cited in 1 scientific paper (total in 1 paper)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Characterization

Ballistic hole emission spectroscopy of self-assembled GeSi/Si(001) nanoislands

D. O. Filatov, D. V. Guseinov, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov

Lobachevsky State University of Nizhny Novgorod
Full-text PDF (26 kB) Citations (1)
Abstract: Ballistic hole emission microscopy/spectroscopy has been applied to study the electronic structure of the hole states in the self-assembled GeSi/Si(001) nanoislands. The ballistic hole emission microscopic images demonstrated the spots of increased collector current related to the ballistic electron tunnelling via the confined valence band states in the GeSi/Si(001) nanoislands. In the ballistic hole emission spectra of the Ge hut clusters the stepwise features attributed to the quantum confined hole states have been observed. The results of present study demonstrate the capabilities of the ballistic hole emission microscopy/spectroscopy in the characterization of the electronic structures of the valence band states in the GeSi/Si nanostructures.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.16.7443.2017
This work has been supported by Ministry of Education and Science of Russian Federation (Project 16.16.7443.2017).
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 590–592
DOI: https://doi.org/10.1134/S1063782618050068
Bibliographic databases:
Document Type: Article
Language: English
Citation: D. O. Filatov, D. V. Guseinov, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, “Ballistic hole emission spectroscopy of self-assembled GeSi/Si(001) nanoislands”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 505; Semiconductors, 52:5 (2018), 590–592
Citation in format AMSBIB
\Bibitem{FilGusCha18}
\by D.~O.~Filatov, D.~V.~Guseinov, V.~Yu.~Chalkov, S.~A.~Denisov, V.~G.~Shengurov
\paper Ballistic hole emission spectroscopy of self-assembled GeSi/Si(001) nanoislands
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 505
\mathnet{http://mi.mathnet.ru/phts5831}
\elib{https://elibrary.ru/item.asp?id=32740369}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 590--592
\crossref{https://doi.org/10.1134/S1063782618050068}
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  • https://www.mathnet.ru/eng/phts/v52/i5/p505
    • This publication is cited in the following 1 articles:
    1. Andrea Gerbi, Renato Buzio, Cesar González, Fernando Flores, Pedro L. de Andres, “Phase-space ab-initio direct and reverse ballistic-electron emission spectroscopy: Schottky barriers determination for Au/Ge(100)”, Applied Surface Science, 609 (2023), 155218  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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