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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 502 (Mi phts5828)  

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Excitons in Nanostructures

Plasmon-excitonic polaritons in metal-semiconductor nanostructures with quantum wells

V. A. Kosobukin

Ioffe Institute, 194021 St. Petersburg, Russia
Abstract: A theory of plasmon-exciton coupling and its spectroscopy is developed for metal-semiconductor nanostructures. Considered as a model is a periodic superlattice with cells consisting of a quantum well and a layer of metal nanoparticles. The problem is solved self-consistently using the electrodynamic Green’s functions taking account of resonant polarization. Coulomb plasmon-exciton interaction is associated with the dipole surface plasmons of particles and their image charges due to excitonic polarization of neighboring quantum well. Optical reflection spectra are numerically investigated for superlattices with GaAs/AlGaAs quantum wells and silver nanoparticles. Superradiant regime caused by one-dimensional Bragg diffraction is studied for plasmonic, excitonic and plasmon-excitonic polaritons depending on the number of supercells. The plasmon-excitonic Rabi splitting is shown to occur in reflectivity spectra of resonant Bragg structures.
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 579–582
DOI: https://doi.org/10.1134/S1063782618050159
Bibliographic databases:
Document Type: Article
Language: English
Citation: V. A. Kosobukin, “Plasmon-excitonic polaritons in metal-semiconductor nanostructures with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 502; Semiconductors, 52:5 (2018), 579–582
Citation in format AMSBIB
\Bibitem{Kos18}
\by V.~A.~Kosobukin
\paper Plasmon-excitonic polaritons in metal-semiconductor nanostructures with quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 502
\mathnet{http://mi.mathnet.ru/phts5828}
\elib{https://elibrary.ru/item.asp?id=32740366}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 579--582
\crossref{https://doi.org/10.1134/S1063782618050159}
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