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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 496 (Mi phts5822)  

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Excitons in Nanostructures

Biexciton binding energy in spherical quantum dots with $\Gamma_{8}$ valence band

A. A. Golovatenko, M.A. Semina, A. V. Rodina, T. V. Shubina

Ioffe Institute, 194021 St. Petersburg, Russia
Abstract: The biexciton binding energy in spherical CdSe/ZnSe quantum dots is calculated variationally in the framework of $k$ $p$-perturbation theory. Smooth and abrupt confining potentials with the same localization area of carriers are compared for two limiting cases of light hole to heavy hole mass ratio $\beta$ = mlh/mhh: $\beta$ = 1 and $\beta$ = 0. Accounting for correlations between carriers results in their polarized configuration and significantly increases the biexciton binding energy in comparison with the first order perturbation theory. For $\beta$ = 0 in smooth confining potentials there are three nearby biexciton states separated by small energy gap between 1$S3/2$ and 1$P3/2$ hole states.
Funding agency Grant number
Russian Science Foundation 14-22-00107
The work was supported by Russian Science Foundation (Project number 14-22-00107).
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 554–557
DOI: https://doi.org/10.1134/S106378261805010X
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. A. Golovatenko, M.A. Semina, A. V. Rodina, T. V. Shubina, “Biexciton binding energy in spherical quantum dots with $\Gamma_{8}$ valence band”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 496; Semiconductors, 52:5 (2018), 554–557
Citation in format AMSBIB
\Bibitem{GolSemRod18}
\by A.~A.~Golovatenko, M.A.~Semina, A.~V.~Rodina, T.~V.~Shubina
\paper Biexciton binding energy in spherical quantum dots with $\Gamma_{8}$ valence band
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 496
\mathnet{http://mi.mathnet.ru/phts5822}
\elib{https://elibrary.ru/item.asp?id=32740360}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 554--557
\crossref{https://doi.org/10.1134/S106378261805010X}
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