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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 495 (Mi phts5821)  
This article is cited in 9 scientific papers (total in 9 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Excitons in Nanostructures

Calculation of energy states of excitons in square quantum wells

P. A. Belov

Department of Computational Physics, St. Petersburg State University, 198504 St. Petersburg, Russia
Full-text PDF (24 kB) Citations (9)
Abstract: The ground and excited energy states of excitons in single square GaAs-based quantum wells are found by the numerical solution of the three-dimensional Schrödinger equation. This equation is obtained within the envelope-function formalism from the exciton energy operator using the spherical approximation of the Luttinger Hamiltonian. Precise results for the exciton states are achieved by the finite-difference method. The radiative decay rates of the calculated states are also determined.
Funding agency Grant number
Saint Petersburg State University 11.38.213.2014
11.38.241.2015
Russian Foundation for Basic Research 16-02-00245
16-32-00047
Deutsche Forschungsgemeinschaft ICRC TRR 160
The work is supported by SPbU (grants No.11.38.213.2014 and No 11.38.241.2015), RFBR (grants No 16-02-00245, No 16-32-00047) and DFG in the frame of Project ICRC TRR 160.
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 551–553
DOI: https://doi.org/10.1134/S1063782618050032
Bibliographic databases:
Document Type: Article
Language: English
Citation: P. A. Belov, “Calculation of energy states of excitons in square quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 495; Semiconductors, 52:5 (2018), 551–553
Citation in format AMSBIB
\Bibitem{Bel18}
\by P.~A.~Belov
\paper Calculation of energy states of excitons in square quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 495
\mathnet{http://mi.mathnet.ru/phts5821}
\elib{https://elibrary.ru/item.asp?id=32740359}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 551--553
\crossref{https://doi.org/10.1134/S1063782618050032}
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    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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