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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 6, Pages 625–629
DOI: https://doi.org/10.21883/FTP.2018.06.45927.8668 (Mi phts5813) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor physics

High-sensitivity photodetector based on atomically thin MoS$_{2}$

S. D. Lavrova, A. P. Shestakovaa, E. D. Mishinaa, Yu. R. Efimenkovb, A. S. Sigova

a MIREA — Russian Technological University, Moscow
b Joint-Stock Company "Scientific and Production Enterprise Pulsar", Moscow
Full-text PDF (206 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2018.06.45927.8668
Abstract: A design for a high-sensitivity photodetector with a single layer of MoS$_{2}$ transition-metal dichalcogenide used as the basic functional element is proposed and the process of its fabrication is presented step by step. Quality evaluation and the selection of functional MoS$_{2}$ flakes is based on the results of combined optical characterization. The main operating characteristics of the fabricated device are investigated and a photosensitivity of 1.4 mA/W is demonstrated. A difference of this device in comparison with existing analogues is its high photosensitivity at low operating voltages (in the range of $\pm$ 3 V).
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 14.Z50.31.0034
3.7335.2017/9.10
Received: 08.06.2017
Accepted: 28.06.2017
English version:
Semiconductors, 2018, Volume 52, Issue 6, Pages 771–775
DOI: https://doi.org/10.1134/S106378261806012X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. D. Lavrov, A. P. Shestakova, E. D. Mishina, Yu. R. Efimenkov, A. S. Sigov, “High-sensitivity photodetector based on atomically thin MoS$_{2}$”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 625–629; Semiconductors, 52:6 (2018), 771–775
Citation in format AMSBIB
\Bibitem{LavSheMis18}
\by S.~D.~Lavrov, A.~P.~Shestakova, E.~D.~Mishina, Yu.~R.~Efimenkov, A.~S.~Sigov
\paper High-sensitivity photodetector based on atomically thin MoS$_{2}$
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 6
\pages 625--629
\mathnet{http://mi.mathnet.ru/phts5813}
\crossref{https://doi.org/10.21883/FTP.2018.06.45927.8668}
\elib{https://elibrary.ru/item.asp?id=37051678}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 6
\pages 771--775
\crossref{https://doi.org/10.1134/S106378261806012X}
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  • https://www.mathnet.ru/eng/phts/v52/i6/p625
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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