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This article is cited in 10 scientific papers (total in 10 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Study of the properties of II–VI and III–V semiconductor quantum dots
A. I. Mikhailov, V. F. Kabanov, I. A. Gorbachev, E. G. Glukhovskoy Saratov State University
Abstract:
The specific features of the electron spectra of II–VI and III–V semiconductor quantum dots are studied experimentally and theoretically. Analysis of the samples makes it possible to estimate the positions of the first three levels in the electron spectrum of the quantum object. Good qualitative and quantitative agreement between the experimental results and theoretical estimates is attained. It is shown that the mechanism of the experimentally observed field-emission current through a quantum dot is satisfactorily described by Morgulis–Stratton theory in experimental conditions.
Received: 31.08.2017 Accepted: 25.09.2017
Citation:
A. I. Mikhailov, V. F. Kabanov, I. A. Gorbachev, E. G. Glukhovskoy, “Study of the properties of II–VI and III–V semiconductor quantum dots”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 603–607; Semiconductors, 52:6 (2018), 750–754
Linking options:
https://www.mathnet.ru/eng/phts5809 https://www.mathnet.ru/eng/phts/v52/i6/p603
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Abstract page: | 37 | Full-text PDF : | 42 |
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