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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 6, Pages 560–564
DOI: https://doi.org/10.21883/FTP.2018.06.45915.8650
(Mi phts5801)
 

This article is cited in 2 scientific papers (total in 2 papers)

Electronic properties of semiconductors

On the structure of the Mössbauer spectra of $^{119m}$Sn impurity atoms in lead chalcogenides under conditions of the radioactive equilibrium of $^{119m}$Te/$^{119}$Sn isotopes

E. I. Terukova, A. V. Marchenkob, P. P. Sereginb, N. N. Zhukovb

a Ioffe Institute, St. Petersburg
b Herzen State Pedagogical University of Russia, St. Petersburg
Full-text PDF (998 kB) Citations (2)
Abstract: The method of Mössbauer emission spectroscopy with $^{119m}$Te and $^{119}$Sb parent isotopes in the radioactive-equilibrium state is used to obtain information on the localization and valence state of $^{119m}$Sn daughter atoms formed from the $^{119}$Sb and $^{119m}$Te parent atoms at cation and anion sites of the lattice of PbSe and PbTe lead chalcogenides.
Received: 26.07.2017
Accepted: 12.09.2017
English version:
Semiconductors, 2018, Volume 52, Issue 6, Pages 708–712
DOI: https://doi.org/10.1134/S1063782618060222
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. I. Terukov, A. V. Marchenko, P. P. Seregin, N. N. Zhukov, “On the structure of the Mössbauer spectra of $^{119m}$Sn impurity atoms in lead chalcogenides under conditions of the radioactive equilibrium of $^{119m}$Te/$^{119}$Sn isotopes”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 560–564; Semiconductors, 52:6 (2018), 708–712
Citation in format AMSBIB
\Bibitem{TerMarSer18}
\by E.~I.~Terukov, A.~V.~Marchenko, P.~P.~Seregin, N.~N.~Zhukov
\paper On the structure of the M\"ossbauer spectra of $^{119m}$Sn impurity atoms in lead chalcogenides under conditions of the radioactive equilibrium of $^{119m}$Te/$^{119}$Sn isotopes
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 6
\pages 560--564
\mathnet{http://mi.mathnet.ru/phts5801}
\crossref{https://doi.org/10.21883/FTP.2018.06.45915.8650}
\elib{https://elibrary.ru/item.asp?id=37051657}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 6
\pages 708--712
\crossref{https://doi.org/10.1134/S1063782618060222}
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  • https://www.mathnet.ru/eng/phts/v52/i6/p560
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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