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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor physics
Study of deep levels in a HIT solar cell
S. P. Vikhrova, N. V. Vishnyakova, V. V. Gudzeva, A. V. Ermachikhina, D. V. Zhilinab, V. G. Litvinova, A. D. Maslova, V. G. Mishustina, E. I. Terukovbc, A. S. Titovbc a Ryazan State Radio Engineering University
b R&D Center TFTE, St.-Petersburg
c Ioffe Institute, St. Petersburg
Abstract:
The results of studying a HIT (heterojunction with an intrinsic thin layer) HIT Ag/ITO/$a$-Si:H$(p)$/$a$-Si:H$(i)$/$c$-Si$(n)$/$a$-Si:H$(i)$/$a$-Si:H($n^{+}$)/ITO/Ag solar cell by the capacitance–voltage characteristic and current deep-level relaxation transient spectroscopy methods are presented. The temperature dependence of the capacitance–voltage characteristics of the HIT structure and deep-energy-level parameters are studied. The results of comprehensive studies by the above methods are used to determine the features of the energy-band diagram of actual HIT structures.
Received: 08.06.2017 Accepted: 19.06.2017
Citation:
S. P. Vikhrov, N. V. Vishnyakov, V. V. Gudzev, A. V. Ermachikhin, D. V. Zhilina, V. G. Litvinov, A. D. Maslov, V. G. Mishustin, E. I. Terukov, A. S. Titov, “Study of deep levels in a HIT solar cell”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 787–791; Semiconductors, 52:7 (2018), 926–930
Linking options:
https://www.mathnet.ru/eng/phts5791 https://www.mathnet.ru/eng/phts/v52/i7/p787
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