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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 7, Pages 787–791
DOI: https://doi.org/10.21883/FTP.2018.07.46053.8666
(Mi phts5791)
 

This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor physics

Study of deep levels in a HIT solar cell

S. P. Vikhrova, N. V. Vishnyakova, V. V. Gudzeva, A. V. Ermachikhina, D. V. Zhilinab, V. G. Litvinova, A. D. Maslova, V. G. Mishustina, E. I. Terukovbc, A. S. Titovbc

a Ryazan State Radio Engineering University
b R&D Center TFTE, St.-Petersburg
c Ioffe Institute, St. Petersburg
Full-text PDF (583 kB) Citations (3)
Abstract: The results of studying a HIT (heterojunction with an intrinsic thin layer) HIT Ag/ITO/$a$-Si:H$(p)$/$a$-Si:H$(i)$/$c$-Si$(n)$/$a$-Si:H$(i)$/$a$-Si:H($n^{+}$)/ITO/Ag solar cell by the capacitance–voltage characteristic and current deep-level relaxation transient spectroscopy methods are presented. The temperature dependence of the capacitance–voltage characteristics of the HIT structure and deep-energy-level parameters are studied. The results of comprehensive studies by the above methods are used to determine the features of the energy-band diagram of actual HIT structures.
Received: 08.06.2017
Accepted: 19.06.2017
English version:
Semiconductors, 2018, Volume 52, Issue 7, Pages 926–930
DOI: https://doi.org/10.1134/S1063782618070254
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. P. Vikhrov, N. V. Vishnyakov, V. V. Gudzev, A. V. Ermachikhin, D. V. Zhilina, V. G. Litvinov, A. D. Maslov, V. G. Mishustin, E. I. Terukov, A. S. Titov, “Study of deep levels in a HIT solar cell”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 787–791; Semiconductors, 52:7 (2018), 926–930
Citation in format AMSBIB
\Bibitem{VikVisGud18}
\by S.~P.~Vikhrov, N.~V.~Vishnyakov, V.~V.~Gudzev, A.~V.~Ermachikhin, D.~V.~Zhilina, V.~G.~Litvinov, A.~D.~Maslov, V.~G.~Mishustin, E.~I.~Terukov, A.~S.~Titov
\paper Study of deep levels in a HIT solar cell
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 7
\pages 787--791
\mathnet{http://mi.mathnet.ru/phts5791}
\crossref{https://doi.org/10.21883/FTP.2018.07.46053.8666}
\elib{https://elibrary.ru/item.asp?id=35269413}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 7
\pages 926--930
\crossref{https://doi.org/10.1134/S1063782618070254}
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  • https://www.mathnet.ru/eng/phts/v52/i7/p787
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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