Electrical properties of $p$-NiO/$n$-Si heterostructures based on nanostructured silicon

Silicon nanowires are formed on $n$-Si substrates by chemical etching. $p$-NiO/$n$-Si heterostructures are fabricated by reactive magnetron sputtering. The energy diagram of anisotype $p$-NiO/$n$-Si heterostructures is constructed according to the Anderson model. The current–voltage and capacitance–voltage characteristics are measured and analyzed. The main current-transport mechanisms through the $p$-NiO/$n$-Si heterojunction under forward and reverse biases are established.