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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 7, Pages 712–717
DOI: https://doi.org/10.21883/FTP.2018.07.46040.8669 (Mi phts5778) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Transverse Nernst–Ettingshausen effect in superlattices upon electron-phonon scattering

S. R. Figarovaa, G. I. Guseinovb, V. R. Figarovc

a Baku State University
b Azerbaijan Architecture and Construction University, Baku, Azerbaijan
c Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
Full-text PDF (158 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2018.07.46040.8669
Abstract: The Nernst–Ettingshausen coefficient is calculated in superlattices with the cosine dispersion law in the case of the scattering of charge carriers at acoustic and polar optical phonons in a magnetic field in the layer plane. A significant increase in the Nernst–Ettingshausen coefficient of a degenerate quasi-three-dimensional electron gas in a weak magnetic field is shown. For polar optical-phonon scattering, the Nernst–Ettingshausen coefficient changes sign in a strong magnetic field.
Received: 14.06.2017
Accepted: 17.10.2017
English version:
Semiconductors, 2018, Volume 52, Issue 7, Pages 853–858
DOI: https://doi.org/10.1134/S1063782618070084
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. R. Figarova, G. I. Guseinov, V. R. Figarov, “Transverse Nernst–Ettingshausen effect in superlattices upon electron-phonon scattering”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 712–717; Semiconductors, 52:7 (2018), 853–858
Citation in format AMSBIB
\Bibitem{FigGusFig18}
\by S.~R.~Figarova, G.~I.~Guseinov, V.~R.~Figarov
\paper Transverse Nernst--Ettingshausen effect in superlattices upon electron-phonon scattering
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 7
\pages 712--717
\mathnet{http://mi.mathnet.ru/phts5778}
\crossref{https://doi.org/10.21883/FTP.2018.07.46040.8669}
\elib{https://elibrary.ru/item.asp?id=35269400}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 7
\pages 853--858
\crossref{https://doi.org/10.1134/S1063782618070084}
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  • https://www.mathnet.ru/eng/phts/v52/i7/p712
    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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