Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 7, Pages 699–701
DOI: https://doi.org/10.21883/FTP.2018.07.46037.8602 (Mi phts5775) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Photothreshold of an $\alpha$-GeS layered crystal: first-principles calculation

Z. A. Jahangirliab, F. M. Gashumzadea, D. A. Guseinovaa, B. G. Mehdiyeva, N. B. Mustafaeva

a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Azerbaijan Technical University, Baku
Full-text PDF (189 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2018.07.46037.8602
Abstract: The photothreshold of an $\alpha$-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers.
Received: 04.04.2017
Accepted: 29.11.2017
English version:
Semiconductors, 2018, Volume 52, Issue 7, Pages 840–842
DOI: https://doi.org/10.1134/S1063782618070060
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Z. A. Jahangirli, F. M. Gashumzade, D. A. Guseinova, B. G. Mehdiyev, N. B. Mustafaev, “Photothreshold of an $\alpha$-GeS layered crystal: first-principles calculation”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 699–701; Semiconductors, 52:7 (2018), 840–842
Citation in format AMSBIB
\Bibitem{JahGasGus18}
\by Z.~A.~Jahangirli, F.~M.~Gashumzade, D.~A.~Guseinova, B.~G.~Mehdiyev, N.~B.~Mustafaev
\paper Photothreshold of an $\alpha$-GeS layered crystal: first-principles calculation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 7
\pages 699--701
\mathnet{http://mi.mathnet.ru/phts5775}
\crossref{https://doi.org/10.21883/FTP.2018.07.46037.8602}
\elib{https://elibrary.ru/item.asp?id=35269397}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 7
\pages 840--842
\crossref{https://doi.org/10.1134/S1063782618070060}
Linking options:
  • https://www.mathnet.ru/eng/phts5775
  • https://www.mathnet.ru/eng/phts/v52/i7/p699
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:45
    Full-text PDF :13
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024