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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 7, Pages 699–701
DOI: https://doi.org/10.21883/FTP.2018.07.46037.8602 (Mi phts5775) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Photothreshold of an $\alpha$-GeS layered crystal: first-principles calculation

Z. A. Jahangirliab, F. M. Gashumzadea, D. A. Guseinovaa, B. G. Mehdiyeva, N. B. Mustafaeva

a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Azerbaijan Technical University, Baku
Full-text PDF (189 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2018.07.46037.8602
Abstract: The photothreshold of an $\alpha$-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick, which corresponds to the doublet unit cell size of a bulk crystal. It is shown that the magnitude of the photothreshold is almost invariable with a crystal thickness larger than 10 layers.
Received: 04.04.2017
Accepted: 29.11.2017
English version:
Semiconductors, 2018, Volume 52, Issue 7, Pages 840–842
DOI: https://doi.org/10.1134/S1063782618070060
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Z. A. Jahangirli, F. M. Gashumzade, D. A. Guseinova, B. G. Mehdiyev, N. B. Mustafaev, “Photothreshold of an $\alpha$-GeS layered crystal: first-principles calculation”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 699–701; Semiconductors, 52:7 (2018), 840–842
Citation in format AMSBIB
\Bibitem{JahGasGus18}
\by Z.~A.~Jahangirli, F.~M.~Gashumzade, D.~A.~Guseinova, B.~G.~Mehdiyev, N.~B.~Mustafaev
\paper Photothreshold of an $\alpha$-GeS layered crystal: first-principles calculation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 7
\pages 699--701
\mathnet{http://mi.mathnet.ru/phts5775}
\crossref{https://doi.org/10.21883/FTP.2018.07.46037.8602}
\elib{https://elibrary.ru/item.asp?id=35269397}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 7
\pages 840--842
\crossref{https://doi.org/10.1134/S1063782618070060}
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  • https://www.mathnet.ru/eng/phts/v52/i7/p699
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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