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Electronic properties of semiconductors
Radiative recombination, carrier capture at traps, and photocurrent relaxation in PbSnTe : In with a composition close to band inversion
D. V. Ishchenko, I. G. Neizvestnyi Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
Based on the notions that PbSnTe:In is a direct-gap semiconductor, the radiative-recombination lifetime is calculated, and the photocurrent relaxation and dependences of the instantaneous electron and hole lifetime are calculated under the assumption that PbSnTe:In is a disordered structure containing capture centers. These calculations explain such experimentally observed peculiarities of PbSnTe:In as a high photosensitivity in a wide wavelength range, pinning of the Fermi level, and long-term photocurrent relaxation. Calculations are also compared with experimental data and the possible parameters of photodetectors are evaluated.
Received: 18.04.2017 Accepted: 28.11.2017
Citation:
D. V. Ishchenko, I. G. Neizvestnyi, “Radiative recombination, carrier capture at traps, and photocurrent relaxation in PbSnTe : In with a composition close to band inversion”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 694–698; Semiconductors, 52:7 (2018), 836–839
Linking options:
https://www.mathnet.ru/eng/phts5774 https://www.mathnet.ru/eng/phts/v52/i7/p694
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Abstract page: | 33 | Full-text PDF : | 19 |
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