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Non-electronic properties of semiconductors (atomic structure, diffusion)
Matrix calculation of the spectral characteristics of AII–BVI semiconductors doped with iron-group ions
I. S. Kurchatov, E. F. Kustov National Research University "Moscow Power Engineering Institute"
Abstract:
A method for the matrix calculation of the spectral characteristics of AII–BVI semiconductors doped with iron-group ions is proposed, which takes into account all possible interactions in the ion and the effect of intramolecular surrounding fields of different symmetries. A technique for calculating the oscillator strength on the basis of eigenfunctions of the resulting states of 3$d^{7}$, 3$d^{8}$, and 3$d^{6}$ electron configurations is developed. The spectral regularities of the Co$^{2+}$, Ni$^{2+}$, and Fe$^{2+}$ energy structures for the ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, and CdTe materials are studied. All possible spectral bands in iron-group ions implanted in AII–BVI semiconductors in the range of 1.3–3 $\mu$m are established. The possibility of implementing the laser effect on these materials is estimated.
Received: 24.08.2017 Accepted: 28.11.2017
Citation:
I. S. Kurchatov, E. F. Kustov, “Matrix calculation of the spectral characteristics of AII–BVI semiconductors doped with iron-group ions”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 679–685; Semiconductors, 52:7 (2018), 821–827
Linking options:
https://www.mathnet.ru/eng/phts5772 https://www.mathnet.ru/eng/phts/v52/i7/p679
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Abstract page: | 28 | Full-text PDF : | 20 |
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