Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 8, Pages 896–899
DOI: https://doi.org/10.21883/FTP.2018.08.46215.8765
(Mi phts5759)
 

This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Influence of isotropic pressure on the current–voltage characteristics of surface-barrier diodes Sb–$p$-Si$\langle$Mn$\rangle$–Au

S. Zaynabidinov, I. G. Tursunov, O. Khimmatkulov

National University of Uzbekistan, Tashkent
Full-text PDF (106 kB) Citations (2)
Abstract: The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb–$p$-Si$\langle$Mn$\rangle$–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be $e\varphi_\delta$ = 0.75 eV and $\delta$ = -1.54 $\times$ 10$^{-11}$ eV/Pa, respectively.
Received: 14.11.2017
Accepted: 29.11.2017
English version:
Semiconductors, 2018, Volume 52, Issue 8, Pages 1027–1030
DOI: https://doi.org/10.1134/S1063782618080262
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. Zaynabidinov, I. G. Tursunov, O. Khimmatkulov, “Influence of isotropic pressure on the current–voltage characteristics of surface-barrier diodes Sb–$p$-Si$\langle$Mn$\rangle$–Au”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 896–899; Semiconductors, 52:8 (2018), 1027–1030
Citation in format AMSBIB
\Bibitem{ZayTurKhi18}
\by S.~Zaynabidinov, I.~G.~Tursunov, O.~Khimmatkulov
\paper Influence of isotropic pressure on the current--voltage characteristics of surface-barrier diodes Sb--$p$-Si$\langle$Mn$\rangle$--Au
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 8
\pages 896--899
\mathnet{http://mi.mathnet.ru/phts5759}
\crossref{https://doi.org/10.21883/FTP.2018.08.46215.8765}
\elib{https://elibrary.ru/item.asp?id=35269432}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 8
\pages 1027--1030
\crossref{https://doi.org/10.1134/S1063782618080262}
Linking options:
  • https://www.mathnet.ru/eng/phts5759
  • https://www.mathnet.ru/eng/phts/v52/i8/p896
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:38
    Full-text PDF :18
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024