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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 8, Pages 896–899
DOI: https://doi.org/10.21883/FTP.2018.08.46215.8765 (Mi phts5759) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Influence of isotropic pressure on the current–voltage characteristics of surface-barrier diodes Sb–$p$-Si$\langle$Mn$\rangle$–Au

S. Zaynabidinov, I. G. Tursunov, O. Khimmatkulov

National University of Uzbekistan, Tashkent
Full-text PDF (106 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2018.08.46215.8765
Abstract: The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb–$p$-Si$\langle$Mn$\rangle$–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be $e\varphi_\delta$ = 0.75 eV and $\delta$ = -1.54 $\times$ 10$^{-11}$ eV/Pa, respectively.
Received: 14.11.2017
Accepted: 29.11.2017
English version:
Semiconductors, 2018, Volume 52, Issue 8, Pages 1027–1030
DOI: https://doi.org/10.1134/S1063782618080262
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. Zaynabidinov, I. G. Tursunov, O. Khimmatkulov, “Influence of isotropic pressure on the current–voltage characteristics of surface-barrier diodes Sb–$p$-Si$\langle$Mn$\rangle$–Au”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 896–899; Semiconductors, 52:8 (2018), 1027–1030
Citation in format AMSBIB
\Bibitem{ZayTurKhi18}
\by S.~Zaynabidinov, I.~G.~Tursunov, O.~Khimmatkulov
\paper Influence of isotropic pressure on the current--voltage characteristics of surface-barrier diodes Sb--$p$-Si$\langle$Mn$\rangle$--Au
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 8
\pages 896--899
\mathnet{http://mi.mathnet.ru/phts5759}
\crossref{https://doi.org/10.21883/FTP.2018.08.46215.8765}
\elib{https://elibrary.ru/item.asp?id=35269432}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 8
\pages 1027--1030
\crossref{https://doi.org/10.1134/S1063782618080262}
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  • https://www.mathnet.ru/eng/phts/v52/i8/p896
    • This publication is cited in the following 2 articles:
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