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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 8, Pages 847–852
DOI: https://doi.org/10.21883/FTP.2018.08.46208.8793 (Mi phts5752) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Electronic properties of semiconductors

Microwave magnetoabsorption oscillations in Fe-doped HgSe crystals

A. I. Veingera, I. V. Kochmana, V. I. Okulovb, M. D. Andriichukc, L. D. Paranchichc

a Ioffe Institute, St. Petersburg
b Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
c Chernivtsi National University named after Yuriy Fedkovych
Full-text PDF (233 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2018.08.46208.8793
Abstract: Magnetoresistance oscillations are considered in the case of microwave-radiation absorption in HgSe samples with a different Fe-impurity concentration. From the simultaneous analysis of the field and temperature dependences of the Shubnikov–de Haas oscillations, the effective mass, the Dingle temperature, and the quantum-limit field corresponding to the Fermi level are obtained. A method for analyzing the spectra with several oscillation frequencies, i.e., the beating effect, is proposed. The results are compared with data obtained by Hall measurements.
Funding agency Grant number
Russian Foundation for Basic Research 16-02-00352
Received: 07.12.2017
Accepted: 15.12.2017
English version:
Semiconductors, 2018, Volume 52, Issue 8, Pages 980–985
DOI: https://doi.org/10.1134/S1063782618080237
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Veinger, I. V. Kochman, V. I. Okulov, M. D. Andriichuk, L. D. Paranchich, “Microwave magnetoabsorption oscillations in Fe-doped HgSe crystals”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 847–852; Semiconductors, 52:8 (2018), 980–985
Citation in format AMSBIB
\Bibitem{VeiKocOku18}
\by A.~I.~Veinger, I.~V.~Kochman, V.~I.~Okulov, M.~D.~Andriichuk, L.~D.~Paranchich
\paper Microwave magnetoabsorption oscillations in Fe-doped HgSe crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 8
\pages 847--852
\mathnet{http://mi.mathnet.ru/phts5752}
\crossref{https://doi.org/10.21883/FTP.2018.08.46208.8793}
\elib{https://elibrary.ru/item.asp?id=35269425}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 8
\pages 980--985
\crossref{https://doi.org/10.1134/S1063782618080237}
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  • https://www.mathnet.ru/eng/phts/v52/i8/p847
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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