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This article is cited in 1 scientific paper (total in 1 paper)
Non-electronic properties of semiconductors (atomic structure, diffusion)
Solid-phase reactions and phase transformations in a nanoscale bismuth/selenium film structure
V. Ya. Kogai, G. M. Mikheev Institute of Mechanics, Ural Branch of RAS, Izhevsk
Abstract:
Experimental results of a study concerned with solid-phase reactions and phase transformations in a Bi/Se nanoscale film structure under heat treatment in vacuum are presented. Nanocrystalline Bi$_{2}$Se$_{3}$, BiSe, and Bi$_{4}$Se$_{3}$ films are obtained for the first time by solid-phase synthesis at various ratios between the Bi and Se layer thicknesses. The phase-transformation temperatures at which Se, BiSe, and Bi4Se3 crystalline phases are formed are determined. The average crystallite sizes in the Bi$_{2}$Se$_{3}$, BiSe, and Bi$_{4}$Se$_{3}$ films are found to be 21, 23, and 33 nm, respectively.
Received: 20.09.2017 Accepted: 18.10.2017
Citation:
V. Ya. Kogai, G. M. Mikheev, “Solid-phase reactions and phase transformations in a nanoscale bismuth/selenium film structure”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 823–826; Semiconductors, 52:8 (2018), 957–960
Linking options:
https://www.mathnet.ru/eng/phts5747 https://www.mathnet.ru/eng/phts/v52/i8/p823
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