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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 9, Pages 995–999
DOI: https://doi.org/10.21883/FTP.2018.09.46146.8804 (Mi phts5729) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Surface, interfaces, thin films

Structure and electrical properties of zirconium-doped tin-oxide films

A. V. Sitnikov, O. V. Zhilova, I. V. Babkina, V. A. Makagonov, Yu. E. Kalinin, O. I. Remizova

Voronezh State Technical University
Full-text PDF (144 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2018.09.46146.8804
Abstract: Thin Zr-stabilized SnO$_2$ films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO$_2$ samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and electrical properties of the synthesized films is studied. The onset of crystallization in thin-film Sn–Zr–O systems is observed at 673 and 773 K, which is accompanied by the appearance of metastable phases. Being heated to 873 K, these phases are transformed into Sn + Sn$_2$O$_3$. It is found that the electrotransfer the film crystallization at temperatures close to room temperature is thermally activated with an activation energy of 0.78 eV. Tin-oxide films doped with Zr from 0.6 to 3.9 at % manifest the property of hydrogen-gas sensitivity after crystallization.
Keywords: SnO$_2$ Films, Film Crystallization, Single Production Process, Zirconia Solid Solution, Zirconium Concentration.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 3.1867.2017/4.6
Received: 21.12.2017
Accepted: 05.02.2018
English version:
Semiconductors, 2018, Volume 52, Issue 9, Pages 1118–1122
DOI: https://doi.org/10.1134/S106378261809018X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Sitnikov, O. V. Zhilova, I. V. Babkina, V. A. Makagonov, Yu. E. Kalinin, O. I. Remizova, “Structure and electrical properties of zirconium-doped tin-oxide films”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 995–999; Semiconductors, 52:9 (2018), 1118–1122
Citation in format AMSBIB
\Bibitem{SitZhiBab18}
\by A.~V.~Sitnikov, O.~V.~Zhilova, I.~V.~Babkina, V.~A.~Makagonov, Yu.~E.~Kalinin, O.~I.~Remizova
\paper Structure and electrical properties of zirconium-doped tin-oxide films
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 9
\pages 995--999
\mathnet{http://mi.mathnet.ru/phts5729}
\crossref{https://doi.org/10.21883/FTP.2018.09.46146.8804}
\elib{https://elibrary.ru/item.asp?id=36903542}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 9
\pages 1118--1122
\crossref{https://doi.org/10.1134/S106378261809018X}
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  • https://www.mathnet.ru/eng/phts/v52/i9/p995
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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